Inexpensive modulated backscatter reflector

• US 6,243,012 B1
• Filed: 12/31/1996
• Issued: 06/05/2001
• Est. Priority Date: 12/31/1996
• Status: Expired due to Term

• Current Assignee: Lucent Technologies, Inc. (Nokia Corporation)
• Original Assignee: Lucent Technologies, Inc. (Nokia Corporation)
• Inventors: Wright, Gregory Alan, Sweetman, Eric, Shober, R. Anthony
• Primary Examiner(s): ZIMMERMAN, BRIAN A
• Application Number:
  US08/774,499
• Time in Patent Office: 1,617 Days
• Field of Search: 340/825.54, 340/572, 340/573, 340/572.7, 340/572.5, 340/10.34, 340/10.1, 340/572.2, 342/42, 342/44, 455/38.2, 455/45
• US Class Current: 340/572.7
• CPC Class Codes: G01S 13/756 using a signal generator for modifying the reflectivity of the reflector G01S13/758 takes precedence
• CPC Class Codes: G01S 13/758 using a signal generator powered by the interrogation signal
• CPC Class Codes: G06K 19/0723 the record carrier comprising an arrangement for non-contact communication, e.g. wireless communication circuits on transponder cards, non-contact smart cards or RFIDs

Abstract

The present invention provides for an inexpensive RFID Tag design which uses an inexpensive Backscatter Modulator. The modulator is simply a CMOS gate driven by a shift register containing a modulating signal. The CMOS gate is connected to the antenna such that it modulates the reflectivity of the antenna in accordance with the modulating signal. In a second embodiment, the Tag is incorporated into a single CMOS integrated circuit which comprises all of the components, except for the antenna, necessary to implement an inexpensive read-only RFID Tag.

Claims

1. A Tag for an RFID communication system using MBS comprising:

a data storage device containing information;

a modulator consisting of one CMOS semiconductor gate electrically connected directly at a first end of the semiconductor gate to the data storage device allowing the semiconductor gate to receive the information; and

an antenna having a certain reflectivity and electrically connected directly to a second end of the semiconductor gate such that the CMOS semiconductor gate modulates the reflectivity of the antenna in accordance with the received information.

2. The Tag of claim 1 wherein the CMOS semiconductor gate is electrically connected directly at the first end of the semiconductor gate to a feed point of the antenna.

3. The Tag of claim 1 wherein the data storage device is a shift register.

4. The Tag of claim 1 wherein the CMOS semiconductor gate is an inverter gate.

5. The Tag of claim 1 wherein the CMOS semiconductor gate is an XOR gate.

6. The Tag of claim 1 wherein the CMOS semiconductor gate is an OR gate.

7. The Tag of claim 1 wherein the CMOS semiconductor gate is an AND gate.

8. The Tag of claim 1, wherein the Tag is a passive device, further comprising a power module electrically connected to the antenna to draw power from RF signals received at the antenna and electrically connected to supply the power to the data storage device to drive the received information to cause the CMOS semiconductor gate to modulate the reflectivity of the antenna.

9. The Tag of claim 1 wherein the CMOS semiconductor gate is other than a high quality diode gate.

10. A Tag for an RFID communication system using MBS comprising:

an antenna having a certain reflectivity; and

an integrated circuit electrically connected to the antenna for modulating the reflectivity of the antenna in accordance with information stored in the integrated circuit, wherein the integrated circuit comprises a data storage device for storing the information and a modulator consisting of one CMOS semiconductor gate connected directly at a first end of the semiconductor gate to the antenna and directly at a second end of the semiconductor gate to the data storage device for modulating the reflectivity of the antenna in accordance with the stored information.

11. The Tag of claim 10, wherein the Tag is a passive device, further comprising a power module electrically connected to the antenna to draw power from RF signals received at the antenna and electrically connected to supply the power to the data storage device to drive the received information to cause the CMOS semiconductor gate to modulate the reflectivity of the antenna.

12. The Tag of claim 10 wherein the CMOS semiconductor gate is other than a high quality diode gate.

13. A Tag for an RFID communication system using MBS comprising:

a data storage device containing information;

a modulator consisting of one CMOS semiconductor gate electrically connected to the data storage device allowing the semiconductor gate to receive the information; and

an antenna having a certain reflectivity and electrically connected to the semiconductor gate such that the CMOS semiconductor gate modulates the reflectivity of the antenna in accordance with the received information, wherein the CMOS semiconductor gate is electrically connected directly to a feed point of the antenna.