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Mask data design method

  • US 6,243,855 B1
  • Filed: 09/29/1998
  • Issued: 06/05/2001
  • Est. Priority Date: 09/30/1997
  • Status: Expired due to Term
First Claim
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1. A mask data design method correcting a design pattern and using the corrected design pattern as mask data to improve fidelity of a transferred pattern onto a wafer, said method comprising the steps of:

  • extracting a correction target segment from said design pattern;

    dividing the extracted segment into lengths suited for correction;

    determining whether characteristics of spatial arrangement of a divided segment comply to a predetermined one-dimensional rule; and

    classifying, if the characteristics of spatial arrangement of the divided segment comply to the predetermined one-dimensional rule, said divided segment as a one-dimensional pattern and, if the characteristics of spatial arrangement of the divided segment does not comply to the predetermined one-dimensional rule, classifying said divided segment as a two-dimensional pattern; and

    correcting said divided segment in accordance with classified pattern types.

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