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Method and apparatus for control of critical dimension using feedback etch control

  • US 6,245,581 B1
  • Filed: 04/19/2000
  • Issued: 06/12/2001
  • Est. Priority Date: 04/19/2000
  • Status: Expired due to Term
First Claim
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1. A method for controlling critical dimensions, comprising:

  • processing at least one run of semiconductor devices;

    performing a critical dimension measurement upon at least one of said processed semiconductor device;

    performing an analysis of said critical dimension measurement; and

    performing a secondary process upon said semiconductor device in response to said critical dimension analysis.

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