Method and apparatus for control of critical dimension using feedback etch control

• US 6,245,581 B1
• Filed: 04/19/2000
• Issued: 06/12/2001
• Est. Priority Date: 04/19/2000
• Status: Expired due to Term

• Current Assignee: Advanced Micro Devices, Inc.
• Original Assignee: Advanced Micro Devices, Inc.
• Inventors: Bonser, Douglas, Toprac, Anthony J., Purdy, Matthew, Behnke, John R., Hussey, Jr., James H.
• Primary Examiner(s): POWELL, WILLIAM A
• Application Number:
  US09/552,491
• Time in Patent Office: 419 Days
• Field of Search: 438/8, 438/9, 438/14, 438/16, 438/689, 438/710, 438/719, 438/735, 438/745, 438/752, 438/753, 216/59, 216/60-61, 216/84, 216/85, 216/86, 156/345.LC, 156/345.MT
• US Class Current: 438/8
• CPC Class Codes: H01L 21/67276 Production flow monitoring, e.g. for increasing throughput program-control systems per se G05B19/00, e.g. total factory control G05B19/418
• CPC Class Codes: H01L 22/26 Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement endpoint detection arrangements in CMP apparatus B24B37/013, in discharge apparatus H01J37/32
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

The present invention provides for a method and an apparatus for controlling critical dimensions. At least one run of semiconductor devices is processed. A critical dimension measurement is performed upon at least one of the processed semiconductor device. An analysis of the critical dimension measurement is performed. A secondary process upon the semiconductor device in response to the critical dimension analysis is performed.

Claims

1. A method for controlling critical dimensions, comprising:

processing at least one run of semiconductor devices;

performing a critical dimension measurement upon at least one of said processed semiconductor device;

performing an analysis of said critical dimension measurement; and

performing a secondary process upon said semiconductor device in response to said critical dimension analysis.

2. The method described in claim 1, wherein performing a process run of semiconductor devices further comprises processing semiconductor wafers.

3. The method described in claim 1, wherein performing a critical dimension measurement further comprises performing critical dimension measurements on a polysilicon gate.

4. The method described in claim 3, wherein performing a critical dimension measurement further comprises measuring a width of a polysilicon line.

5. The method described in claim 1, wherein performing a secondary process upon said semiconductor device further comprises performing a secondary etch process.

6. The method described in claim 5, wherein performing a secondary etch process further comprises:

determining an amount of critical dimension adjustments to be made on said semiconductor device;

modifying at least one control input signal for controlling said secondary etch process;

using a mask for preventing etching on the surface of said semiconductor device; and

performing an isotropic etching process on said semiconductor device.

7. The method described in claim 6, wherein modifying at least one control input signal further comprises modifying a signal that controls a flow rate of a process gas.

8. The method described in claim 6, wherein modifying at least one control input signal further comprises modifying a signal that controls an etch time period.

9. The method described in claim 6, wherein modifying at least one control input signal further comprises modifying a signal that controls a power level of an etch process.

10. The method described in claim 6, wherein modifying at least one control input signal further comprises modifying a signal that controls a pressure level of an etch process.

11. The method described in claim 6, wherein modifying at least one control input signal further comprises modifying a signal that controls a temperature setting during an etch process.

12. An apparatus for controlling critical dimensions, comprising:

a photolithography process tool capable of performing photolithography processes on a semiconductor device;

a photolithography metrology tool coupled with said photolithography process tool, said photolithography metrology tool being capable of acquiring photolithography metrology data;

a standard etch-processing tool capable of receiving said semiconductor device from said photolithography metrology tool;

a standard etch-processing metrology tool coupled with said standard etch-processing process tool, said standard etch-processing metrology being capable of acquiring standard etch-processing metrology data;

a secondary etch-processing tool capable of receiving said semiconductor device from said standard etch-processing metrology tool;

a secondary etch-processing metrology tool coupled with said secondary etch-processing tool, said secondary etch-processing metrology tool metrology being capable of acquiring secondary etch-processing metrology data;

a control algorithm capable of receiving at least one of photolithography metrology data, standard etch-processing metrology data, and secondary etch-processing metrology data, said control algorithm being capable of controlling at least one of said photolithography metrology tool, said standard etch-processing tool, and said secondary etch-processing tool.

13. The apparatus of claim 12, wherein said control algorithm is integrated into a process control system.

14. The apparatus of claim 13, wherein said process control system is an Advanced Process Control framework.

15. An apparatus for controlling critical dimensions, comprising:

means for processing at least one run of semiconductor devices;

means for performing a critical dimension measurement upon at least one of said processed semiconductor device;

means for performing an analysis of said critical dimension measurement; and

means for performing a secondary process upon said semiconductor device in response to said critical dimension analysis.

16. A computer readable program storage device encoded with instructions that, when executed by a computer, performs a method for controlling critical dimensions, comprising:

processing at least one run of semiconductor devices;

performing a critical dimension measurement upon at least one of said processed semiconductor device;

performing an analysis of said critical dimension measurement; and

performing a secondary process upon said semiconductor device in response to said critical dimension analysis.

17. The computer readable program storage device encoded with instructions that, when executed by a computer, performs the method described in claim 16, wherein performing a process run of semiconductor devices further comprises processing semiconductor wafers.

18. The computer readable program storage device encoded with instructions that, when executed by a computer, performs the method described in claim 16, wherein performing critical dimension measurements further comprises performing a critical dimension measurement on a polysilicon gate.

19. The computer readable program storage device encoded with instructions that, when executed by a computer, performs the method described in claim 18, wherein performing a critical dimension measurement further comprises measuring a width of a polysilicon line.

20. The computer readable program storage device encoded with instructions that, when executed by a computer, performs the method described in claim 16, wherein performing a secondary process upon said semiconductor device further comprises performing a secondary etch process.

21. The computer readable program storage device encoded with instructions that, when executed by a computer, performs the method described in claim 20, wherein performing a secondary etch process further comprises:

determining an amount of critical dimension adjustments to be made on said semiconductor device;

modifying at least one control input signal for controlling said secondary etch process;

using a hard mask for preventing etching on the surface of said semiconductor device; and

performing an isotropic etching process on said semiconductor device.

22. The computer readable program storage device encoded with instructions that, when executed by a computer, performs the method described in claim 21, wherein modifying at least one control input signal further comprises modifying a signal that controls a flow rate of a process gas.

23. The computer readable program storage device encoded with instructions that, when executed by a computer, performs the method described in claim 21, wherein modifying at least one control input signal further comprises modifying a signal that controls an etch time period.

24. The computer readable program storage device encoded with instructions that, when executed by a computer, performs the method described in claim 21, wherein modifying at least one control input signal further comprises modifying a signal that controls a power level of an etch process.

25. The computer readable program storage device encoded with instructions that, when executed by a computer, performs the method described in claim 21, wherein modifying at least one control input signal further comprises modifying a signal that controls a pressure level of an etch process.

26. The computer readable program storage device encoded with instructions that, when executed by a computer, performs the method described in claim 21, wherein modifying at least one control input signal further comprises modifying a signal that controls a temperature setting during an etch process.