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Low dielectric semiconductor device with rigid, conductively lined interconnection system

  • US 6,246,118 B1
  • Filed: 02/18/1999
  • Issued: 06/12/2001
  • Est. Priority Date: 02/18/1999
  • Status: Expired due to Term
First Claim
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1. A semiconductor device comprising:

  • a substrate having active regions; and

    an interconnection system comprising;

    a first patterned metal layer, comprising metal features, over the substrate;

    a plurality of patterned metal layers, each patterned metal layer containing metal features, above the first patterned metal layer terminating with an uppermost patterned metal layer;

    vias electrically connecting metal features of different patterned metal layers;

    contact electrically connecting active regions to metal features of the first patterned metal layer;

    air gaps, substantially continuous throughout the interconnection system, between the patterned metal layers, metal features, and vias; and

    a conductive liner, comprising a material different from the metal features, directly on the metal features and vias, wherein the conductive liner substantially envelops all the metal features and vias.

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