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Electro-optical device

  • US 6,246,453 B1
  • Filed: 07/22/1999
  • Issued: 06/12/2001
  • Est. Priority Date: 06/25/1996
  • Status: Expired due to Term
First Claim
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1. A semiconductor device comprising:

  • a transistor formed on an insulating surface, said transistor including;

    a semiconductor film having source and drain regions, a channel forming region between the source and drain regions, a gate insulating film, a gate electrode adjacent to the channel forming region having the gate insulating film therebetween;

    a first organic resin film formed over the transistor;

    a conductive film formed on the first organic resin film;

    a second organic resin film formed on the conductive film; and

    a pixel electrode formed on the second organic resin film.

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