Process for producing sputtering targets

• US 6,248,291 B1
• Filed: 12/12/1997
• Issued: 06/19/2001
• Est. Priority Date: 05/18/1995
• Status: Expired due to Fees

• Current Assignee: Asahi Glass Company, Limited (AGC, Inc.)
• Original Assignee: Asahi Glass Company, Limited (AGC, Inc.)
• Inventors: Nakagama, Susumu, Higeta, Masao, Hayashi, Atsushi
• Primary Examiner(s): JENKINS, DANIEL J
• Application Number:
  US08/952,078
• Time in Patent Office: 1,285 Days
• Field of Search: 419/49, 419/46
• US Class Current: 419/46
• CPC Class Codes: C23C 14/3414 Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy

Abstract

A process for producing sputtering targets, which comprises molding a mixture of a powder of a high-melting substance having a melting point of 900° C. or above with a powder of a low-melting metal having a melting point of 700° C. or below at a temperature below the melting point of the low-melting metal under heat and pressure.

Claims

1. A process for producing sputtering targets, which comprises molding a mixture of a powder of a high-melting substance having a melting point of 900°

C. or above with a powder of a low-melting metal having a melting point of 700°

C. or below at a temperature below the melting point of the low-melting metal under heat and pressure, wherein the heating temperature is lower than the melting point of the low-melting metal by at most 50°

C. and the pressure is not higher than 500 kgf/cm², and wherein the powder of the low-melting metal is of at least one metal selected from the group consisting of In and Sn, wherein the mixture contains from 20 to 95 volume % of the powder of the low-melting metal and the target has a relative density of at least 90%.

2. The process for producing sputtering targets according to claim 1, wherein the heating temperature is not lower than 75°

C.

3. The process for producing sputtering targets according to any one of claims 1 or 2, wherein the powder of the high-melting substance is a powder of a simple body or a compound of at least one element selected from the group consisting of Zr, Ti Ta, Hf, Mo, W, Nb, La, Si, Ni, C, B and Cr.