Method and apparatus for automated rework within run-to-run control semiconductor manufacturing

• US 6,248,602 B1
• Filed: 11/01/1999
• Issued: 06/19/2001
• Est. Priority Date: 11/01/1999
• Status: Expired due to Term

• Current Assignee: Advanced Micro Devices, Inc.
• Original Assignee: AMD Company Limited (Advanced Micro Devices, Inc.)
• Inventors: Bode, Christopher A., Campbell, William Jarrett
• Primary Examiner(s): Niebling, John F.
• Assistant Examiner(s): LUK, OLIVIA T
• Application Number:
  US09/430,862
• Time in Patent Office: 596 Days
• Field of Search: 438/14, 438/15, 382/145, 364/468
• US Class Current: 438/14
• CPC Class Codes: H01L 22/20 Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps

Abstract

The present invention provides for a method and an apparatus for performing automated rework in a manufacturing process. A lot of semiconductor devices is processed using a first set of control input parameters. The first set of control input parameters is stored in a memory location. Process data from the processing of the lot of semiconductor devices is acquired. Errors in the process data are analyzed. At least one automated rework procedure is performed on the lot of semiconductor devices in response to the analysis of the process data.

Claims

1. A method for performing automated rework in a manufacturing process, comprising:

processing a lot of semiconductor devices using a first set of control input parameters;

storing said first set of control input parameters in a memory location;

acquiring process data from said processing of said lot of semiconductor devices;

analyzing errors in said process data;

determining a second set of control input parameters in response to said analysis of errors; and

performing at least one automated rework procedure on said lot of semiconductor devices using said second set of control input parameters.

2. The method described in claim 1, wherein processing said lot of semiconductor devices based upon said sets of control input parameters further comprises processing semiconductor wafers.

3. The method described in claim 2, wherein processing semiconductor wafers further comprises using an exposure tool.

4. The method described in claim 2, wherein processing semiconductor wafers further comprises using a photolithography tool.

5. The method described in claim 2, wherein processing semiconductor wafers further comprises using a chemical-mechanical polishing (CMP) tool.

6. The method described in claim 2, wherein processing semiconductor wafers further comprises using an advanced process control framework.

7. The method described in claim 1, wherein processing said lot of semiconductor devices based upon said first set of control settings further comprises processing semiconductor devices based upon control settings defined by a control thread.

8. The method described in claim 1, wherein processing said lot of semiconductor devices based upon said sets of control input parameters further comprises processing semiconductor tools based upon control input parameters that comprise an x-translation signal, a y-translation signal, an x-expansion wafer scale signal, a y-expansion wafer scale signal, a reticle magnification signal, and a reticle rotation signal.

9. The method described in claim 1, wherein acquiring process data from said processing of said first lot of semiconductor devices further comprises accessing metrology relating to the processing of said first lot of semiconductor devices.

10. The method described in claim 1, wherein performing at least one automated rework procedure on said lot of semiconductor devices in response to said analysis of said process data further comprises implementing a modified manufacturing model.

11. The method described in claim 1, wherein performing at least one automated rework procedure on said lot of semiconductor devices further comprises:

initiating a process re-entry preparation procedure for a reprocessing of said lot of semiconductor devices;

reprocessing said lot of semiconductor devices using said second set of control input parameters;

acquiring metrology data relating to said reprocessing of said lot of semiconductor devices;

analyzing error data relating to said reprocessing of said lot of semiconductor devices; and

modifying said second set of control input parameters based upon said metrology data in response to a determination that said error data is outside a predetermined error tolerance level.

12. The method as described in claim 11, wherein initiating a process re-entry preparation procedure for a reprocessing of said lot of semiconductor devices further comprises moving said lot of semiconductor devices towards a process area.

13. The method as described in claim 11, wherein initiating a process re-entry preparation procedure for a reprocessing of said lot of semiconductor devices further comprises performing a pre-processing step.

14. The method as described in claim 11, wherein performing a pre-processing step further comprises removing resist patterns from said lot of semiconductor devices.

15. The method as described in claim 11, wherein calculating a second set of control settings for said reprocessing of said lot of semiconductor devices further comprises modifying said stored first set of control settings based on metrology data relating to said processing of said semiconductor devices.

16. The method described in claim 1, wherein reprocessing said lot of semiconductor devices using said second set of control settings further comprises reprocessing semiconductor devices based upon control settings defined by a control thread.

17. The method described in claim 11, wherein modifying said sets of control settings further comprises:

calculating a recommended step size in response to said error data;

determining a maximum step size;

comparing said calculated step size to said maximum step size; and

updating at least one control setting based in response of said comparison of said calculated step size to said maximum step size.

18. The method described in claim 17, wherein calculating a recommended step size further comprises calculating said recommended step size using a controller equation.

19. The method described in claim 17, wherein updating at least one control setting based in response of said comparison of said calculated step size to said maximum step size further comprises using said calculated step size to update said control input signal in response to a determination that said calculated step size is smaller than the said maximum step size.

20. The method described in claim 17, wherein updating at least one control setting based in response of said comparison of said calculated step size to said maximum step size further comprises using said maximum step size to update said control input signal in response to a determination that said calculated step size is larger than the said maximum step size.

21. The method described in claim 17, wherein updating at least one control setting based in response of said comparison of said calculated step size to said maximum step size further comprises updating said control input signal on a run to run basis.

23. The computer readable program storage device encoded with instructions that, when executed by a computer, performs the method described in claim 1, wherein processing said lot of semiconductor devices based upon said sets of control input parameters further comprises processing semiconductor wafers.

24. The computer readable program storage device encoded with instructions that, when executed by a computer, performs the method described in claim 23, wherein processing semiconductor wafers further comprises using an exposure tool.

25. The computer readable program storage device encoded with instructions that, when executed by a computer, performs the method described in claim 23, wherein processing semiconductor wafers further comprises using a photolithography tool.

26. The computer readable program storage device encoded with instructions that, when executed by a computer, performs the method described in claim 23, wherein processing semiconductor wafers further comprises using a chemical-mechanical polishing (CMP) tool.

27. The computer readable program storage device encoded with instructions that, when executed by a computer, performs the method described in claim 23, wherein processing semiconductor wafers further comprises using an advanced process control framework.

22. A computer readable program storage device encoded with instructions that, when executed by a computer, performs a method for performing automated rework in a manufacturing process, comprising:

processing a lot of semiconductor devices using a first set of control input parameters;

storing said first set of control input parameters in a memory location;

acquiring process data from said processing of said lot of semiconductor devices;

analyzing errors in said process data;

determining a second set of control input parameters in response to said analysis of errors; and

performing at least one automated rework procedure on said lot of semiconductor devices using said second set of control input parameters.

28. The computer readable program storage device encoded with instructions that, when executed by a computer, performs the method described in claim 22, wherein processing said lot of semiconductor devices based upon said first set of control settings further comprises processing semiconductor devices based upon control settings defined by a control thread.

29. The computer readable program storage device encoded with instructions that, when executed by a computer, performs the method described in claim 22, wherein processing said lot of semiconductor devices based upon said sets of control input parameters further comprises processing semiconductor tools based upon control input parameters that comprise an x-translation signal, a y-translation signal, an x-expansion wafer scale signal, a y-expansion wafer scale signal, a reticle magnification signal, and a reticle rotation signal.

30. The computer readable program storage device encoded with instructions that, when executed by a computer, performs the method described in claim 22, wherein acquiring process data from said processing of said first lot of semiconductor devices further comprises accessing metrology relating to the processing of said first lot of semiconductor devices.

31. The computer readable program storage device encoded with instructions that, when executed by a computer, performs the method described in claim 22, wherein performing at least one automated rework procedure on said lot of semiconductor devices in response to said analysis of said process data further comprises implementing a modified manufacturing model.

32. The computer readable program storage device encoded with instructions that, when executed by a computer, performs the method described in claim 22, wherein performing at least one automated rework procedure on said lot of semiconductor devices further comprises:

initiating a process re-entry preparation procedure for a reprocessing of said lot of semiconductor devices;

reprocessing said lot of semiconductor devices using said second set of control input parameters;

acquiring metrology data relating to said reprocessing of said lot of semiconductor devices;

analyzing error data relating to said reprocessing of said lot of semiconductor devices; and

modifying said second set of control input parameters based upon said metrology data in response to a determination that said error data is outside a predetermined error tolerance level.

33. The computer readable program storage device encoded with instructions that, when executed by a computer, performs the method as described in claim 32, wherein initiating a process re-entry preparation procedure for a reprocessing of said lot of semiconductor devices further comprises moving said lot of semiconductor devices towards a process area.

34. The computer readable program storage device encoded with instructions that, when executed by a computer, performs the method as described in claim 32, wherein initiating a process re-entry preparation procedure for a reprocessing of said lot of semiconductor devices further comprises performing a pre-processing step.

35. The computer readable program storage device encoded with instructions that, when executed by a computer, performs the method as described in claim 34, wherein performing a pre-processing step further comprises removing resist patterns from said lot of semiconductor devices.

36. The computer readable program storage device encoded with instructions that, when executed by a computer, performs the method as described in claim 32, wherein calculating a second set of control settings for said reprocessing of said lot of semiconductor devices further comprises modifying said stored first set of control settings based on metrology data relating to said processing of said semiconductor devices.

37. The computer readable program storage device encoded with instructions that, when executed by a computer, performs the method described in claim 22, wherein reprocessing said lot of semiconductor devices using said second set of control settings further comprises reprocessing semiconductor devices based upon control settings defined by a control thread.

38. The computer readable program storage device encoded with instructions that, when executed by a computer, performs the method described in claim 32, wherein modifying said sets of control settings further comprises:

calculating a recommended step size in response to said error data;

determining a maximum step size;

comparing said calculated step size to said maximum step size; and

updating at least one control setting based in response of said comparison of said calculated step size to said maximum step size.

39. The computer readable program storage device encoded with instructions that, when executed by a computer, performs the method described in claim 38, wherein calculating a recommended step size further comprises calculating said recommended step size using a controller equation.

40. The computer readable program storage device encoded with instructions that, when executed by a computer, performs the method described in claim 38, wherein updating at least one control setting based in response of said comparison of said calculated step size to said maximum step size further comprises using said calculated step size to update said control input signal in response to a determination that said calculated step size is smaller than the said maximum step size.

41. The computer readable program storage device encoded with instructions that, when executed by a computer, performs the method described in claim 38, wherein updating at least one control setting based in response of said comparison of said calculated step size to said maximum step size further comprises using said maximum step size to update said control input signal in response to a determination that said calculated step size is larger than the said maximum step size.

42. The computer readable program storage device encoded with instructions that, when executed by a computer, performs the method described in claim 38, wherein updating at least one control setting based in response of said comparison of said calculated step size to said maximum step size further comprises updating said control input signal on a run to run basis.