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High gain photoconductive semiconductor switch having tailored doping profile zones

  • US 6,248,992 B1
  • Filed: 06/18/1999
  • Issued: 06/19/2001
  • Est. Priority Date: 06/18/1999
  • Status: Expired due to Term
First Claim
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1. A photoconductive semiconductor switch comprising positive and negative electrical contacts located on a semiconductor substrate with the contacts being separated by an intrinsic channel region wherein the contacts are protected from the destructive effects of high current filaments in the channel by respective tailored doping profile zones that separate the contacts from the channel.

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