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Power module with repositioned positive and reduced inductance and capacitance

  • US 6,249,024 B1
  • Filed: 12/08/1999
  • Issued: 06/19/2001
  • Est. Priority Date: 12/09/1998
  • Status: Expired due to Term
First Claim
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1. A power module, comprising:

  • first through sixth MOS-gated switching transistor dice each having a pair of power terminals and a control terminal;

    a substrate;

    a first die pad disposed on the substrate and including longitudinally spaced apart opposing ends, one of the power terminals of the first, third and fifth MOS-gated switching transistor dice being coupled to the first die pad;

    second, third and fourth die pads disposed on the substrate and longitudinally adjacent the first die pad, one of the power terminals of the second, fourth and sixth MOS-gated transistor dice being coupled to respective ones of the second, fourth and sixth die pads such that they are substantially oppositely disposed from the first, third, and fifth MOS-gated transistor dice, respectively;

    a first bonding pad disposed on the substrate and including longitudinally spaced apart opposing ends, the first bonding pad extending substantially adjacent the second, third and fourth die pads, the other of the power terminals of the second, fourth and sixth MOS-gated switching transistor dice being coupled to the first bonding pad;

    a positive bus terminal being coupled to the first die pad at a position between the longitudinal ends thereof; and

    a negative bus terminal being coupled to the first bonding pad at a position between the longitudinal ends thereof.

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