High-frequency power amplifier circuit and high-frequency power amplifier module
First Claim
1. A high-frequency power amplifier adapted to be responsive to a source having a predetermined high-frequency and a predetermined output impedance comprising a first field effect transistor having (a) a gate electrode, (b) a source electrode and (c) an impedance between the gate and source electrodes, the impedance being substantially lower than the source output impedance so there is a substantial impedance mismatch between the source output impedance and the impedance between the gate and source electrodes, a first matching circuit for reducing the impedance mismatch between the source output impedance, and between the gate and source electrodes, the first matching circuit having (a) a first input terminal for connection to a first output terminal of the source, (b) a ground terminal for connection to a second output terminal of the source and connected to the source electrode, (c) a terminal connected to the gate electrode, and (d) an inductive impedance connected in a shunt branch having a terminal connected to the gate electrode, the first matching circuit having an output impedance value in a frequency band extending between the predetermined frequency and a frequency two times the predetermined frequency that does not exceed two times the impedance of the first field effect transistor between the gate and source electrodes thereof, andthe first field effect transistor including a source drain path, a bias circuit for the source drain path connected to power the source drain path, the source drain path having (a) an output terminal at the drain thereof and (b) an output impedance between the source and drain thereof equal approximately to the output impedance of the source, a second field effect transistor having a gate source impedance equal approximately to the gate source impedance of the first field effect transistor, and a second matching circuit connected between the output terminal of the first field effect transistor and the gate electrode of the second field effect transistor, the second matching circuit having an output impedance between the gate and source electrodes of the second field effect transistor, the value of the second matching circuit output impedance in a frequency band extending between the predetermined frequency and a frequency two times the predetermined frequency that does not exceed two times the impedance of the second field effect transistor between the gate and source electrodes thereof.
1 Assignment
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Accused Products
Abstract
An input matching circuit is provided having the output impedance-frequency characteristics wherein the output impedance shows a value approximately equal to that of the gate input impedance of the FET at the frequency of the objective signal to be amplified, and the output impedance shows a value not more than twice the gate input impedance of the FET at least at the entire frequencies from the frequency of the objective signal to be amplified through twice the frequency of the objective signal to be amplified so that the matching between the input previous stage circuit and the gate of the FET can be secured. Thereby, a high-frequency power amplifier circuit and a high-frequency power amplifier module, which can suppress the occurrence of distortion, perform stably, and get miniaturized, are configured.
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Citations
34 Claims
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1. A high-frequency power amplifier adapted to be responsive to a source having a predetermined high-frequency and a predetermined output impedance comprising a first field effect transistor having (a) a gate electrode, (b) a source electrode and (c) an impedance between the gate and source electrodes, the impedance being substantially lower than the source output impedance so there is a substantial impedance mismatch between the source output impedance and the impedance between the gate and source electrodes, a first matching circuit for reducing the impedance mismatch between the source output impedance, and between the gate and source electrodes, the first matching circuit having (a) a first input terminal for connection to a first output terminal of the source, (b) a ground terminal for connection to a second output terminal of the source and connected to the source electrode, (c) a terminal connected to the gate electrode, and (d) an inductive impedance connected in a shunt branch having a terminal connected to the gate electrode, the first matching circuit having an output impedance value in a frequency band extending between the predetermined frequency and a frequency two times the predetermined frequency that does not exceed two times the impedance of the first field effect transistor between the gate and source electrodes thereof, and
the first field effect transistor including a source drain path, a bias circuit for the source drain path connected to power the source drain path, the source drain path having (a) an output terminal at the drain thereof and (b) an output impedance between the source and drain thereof equal approximately to the output impedance of the source, a second field effect transistor having a gate source impedance equal approximately to the gate source impedance of the first field effect transistor, and a second matching circuit connected between the output terminal of the first field effect transistor and the gate electrode of the second field effect transistor, the second matching circuit having an output impedance between the gate and source electrodes of the second field effect transistor, the value of the second matching circuit output impedance in a frequency band extending between the predetermined frequency and a frequency two times the predetermined frequency that does not exceed two times the impedance of the second field effect transistor between the gate and source electrodes thereof.
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14. A high-frequency power amplifier adapted to be responsive to a source having a predetermined high-frequency and a predetermined output impedance comprising a first field effect transistor having (a) a gate electrode, (b) a source electrode and (c) an impedance between the gate and source electrodes, the impedance being substantially lower than the source output impedance so there is a substantial impedance mismatch between the source output impedance and the impedance between the gate and source electrodes, a first matching circuit for reducing the impedance mismatch between the source output impedance, and between the gate and source electrodes, the first matching circuit having (a) a first input terminal for connection to a first output terminal of the source, (b) a ground terminal for connection to a second output terminal of the source and connected to the source electrode, and (c) a terminal connected to the gate electrode, the first matching circuit having an output impedance value in a frequency band extending between the predetermined frequency and a frequency two times the predetermined frequency that does not exceed two times the impedance of the first field effect transistor between the gate and source electrodes thereof, the first field effect transistor including a source drain path, a bias circuit for the source drain path connected to power the source drain path, the source drain path having (a) an output terminal at the drain thereof and (b) an output impedance between the source and drain thereof equal approximately to the output impedance of the source,
a second field effect transistor having a gate source impedance equal approximately to the gate source impedance of the first field effect transistor, and a second matching circuit connected between the output terminal of the first field effect transistor and the gate electrode of the second field effect transistor, the second matching circuit having an output impedance between the gate and source electrodes of the second field effect transistor, the second matching circuit having an output impedance value in a frequency band extending between the predetermined frequency and a frequency two times the predetermined frequency that does not exceed two times the impedance of the second field effect transistor between the gate and source electrodes thereof.
- 18. A high-frequency power amplifier adapted to be responsive to a source having a predetermined high-frequency and a predetermined output impedance comprising a first field effect transistor having (a) a first gate electrode, (b) a first drain electrode, (c) a first source electrode and (d) a first impedance between the first gate and first source electrodes, the first impedance being substantially lower than the source output impedance so there is a substantial impedance mismatch between the source output impedance and the first impedance between the first gate and first source electrodes, a first matching circuit having (a) a first input terminal for connection to a first output terminal of the source, (b) a ground terminal for connection to a second output terminal of the source and connected to the first source electrode, (c) a terminal connected to the first gate electrode, and (d) a first inductive impedance connected in a first shunt branch having a terminal connected to the first gate electrode, the first inductive impedance having a value to cause the impedance shunting the first gate electrode to extend from an impedance value (Z) at the predetermined frequency to an impedance value that is no more than 2Z at a frequency twice the predetermined frequency.
- 22. A high-frequency power amplifier adapted to be responsive to a source having a predetermined high-frequency and a predetermined output impedance comprising a first field effect transistor having (a) a first gate electrode, (b) a first source electrode and (c) a first impedance between the first gate and first source electrodes, the first impedance being substantially lower than the source output impedance so there is a substantial impedance mismatch between the source output impedance and an impedance between the first gate and first source electrodes, a first matching circuit for reducing the impedance mismatch between the source output impedance and the impedance between the first gate and first source electrodes, a second field effect transistor having (a) a second gate electrode, (b) a second source electrode and (c) a second impedance between the second gate and second source electrodes, the second impedance being substantially lower than an output impedance between the first source and first drain electrodes so there is a substantial impedance mismatch between an output impedance of the first field effect transistor and the second impedance between the second gate and second source electrodes, a second matching circuit for reducing the impedance mismatch between the output impedance of the first field effect transistor and the impedance of the second gate and second source electrodes, the second matching circuit having (a) a first input terminal connected to an output terminal of the first field effect transistor, (b) a ground terminal connected to the second source electrode, (c) a terminal connected to the second gate electrode, and (d) an inductive impedance connected in a shunt branch having a terminal connected to the second gate electrode, the second matching circuit having an output impedance value in a frequency band extending between the predetermined frequency and a frequency two times the predetermined frequency that does not exceed two times the impedance of the second field effect transistor between the gate and source electrodes thereof.
Specification