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High-frequency power amplifier circuit and high-frequency power amplifier module

  • US 6,249,186 B1
  • Filed: 04/09/1999
  • Issued: 06/19/2001
  • Est. Priority Date: 04/10/1998
  • Status: Expired due to Fees
First Claim
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1. A high-frequency power amplifier adapted to be responsive to a source having a predetermined high-frequency and a predetermined output impedance comprising a first field effect transistor having (a) a gate electrode, (b) a source electrode and (c) an impedance between the gate and source electrodes, the impedance being substantially lower than the source output impedance so there is a substantial impedance mismatch between the source output impedance and the impedance between the gate and source electrodes, a first matching circuit for reducing the impedance mismatch between the source output impedance, and between the gate and source electrodes, the first matching circuit having (a) a first input terminal for connection to a first output terminal of the source, (b) a ground terminal for connection to a second output terminal of the source and connected to the source electrode, (c) a terminal connected to the gate electrode, and (d) an inductive impedance connected in a shunt branch having a terminal connected to the gate electrode, the first matching circuit having an output impedance value in a frequency band extending between the predetermined frequency and a frequency two times the predetermined frequency that does not exceed two times the impedance of the first field effect transistor between the gate and source electrodes thereof, andthe first field effect transistor including a source drain path, a bias circuit for the source drain path connected to power the source drain path, the source drain path having (a) an output terminal at the drain thereof and (b) an output impedance between the source and drain thereof equal approximately to the output impedance of the source, a second field effect transistor having a gate source impedance equal approximately to the gate source impedance of the first field effect transistor, and a second matching circuit connected between the output terminal of the first field effect transistor and the gate electrode of the second field effect transistor, the second matching circuit having an output impedance between the gate and source electrodes of the second field effect transistor, the value of the second matching circuit output impedance in a frequency band extending between the predetermined frequency and a frequency two times the predetermined frequency that does not exceed two times the impedance of the second field effect transistor between the gate and source electrodes thereof.

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