Magnetoresistive device having a tantalum layer connected to a shielding layer via a layer of a body-centered cubic structure

• US 6,249,407 B1
• Filed: 10/01/1999
• Issued: 06/19/2001
• Est. Priority Date: 02/05/1999
• Status: Expired due to Term

• Current Assignee: Fujitsu Limited
• Original Assignee: Fujitsu Limited
• Inventors: Noma, Kenji, Aoshima, Kenichi
• Primary Examiner(s): Renner, Craig A.
• Application Number:
  US09/411,354
• Time in Patent Office: 627 Days
• Field of Search: 360/324.2, 360/324.1, 360/324.11, 360/324.12, 360/324
• US Class Current: 360/324.2
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 25/00 Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
• CPC Class Codes: G11B 2005/3996 large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
• CPC Class Codes: G11B 5/3903 using magnetic thin film layers or their effects, the films being part of integrated structures
• CPC Class Codes: G11B 5/3909 Arrangements using a magnetic tunnel junction
• CPC Class Codes: H10N 50/10 Magnetoresistive devices

Abstract

In a current perpendicular type magnetoresistive device, a current efficiently flows in a direction perpendicular to a plane of an MR element and the sensitivity of the MR element is increased. Upper and lower shielding layers form a gap therebetween so that the MR element is situated within the gap. Upper and lower gap layers are provided within the gap so that the MR element is interposed between the upper and lower gap layers. The upper gap layer is provided between the upper shielding layer and the MR element. The lower gap layer is provided between the lower shielding layer and the MR element. The lower gap layer is formed from tantalum. An under layer formed from a material having a body-centered cubic structure is interposed between the lower shielding layer and the lower gap layer.

Claims

1. A current perpendicular type magnetoresistive device having a magnetoresistive element in which a current flows through the magnetoresistive element in a direction perpendicular to a plane of the magnetoresistive element, said magnetoresistive device comprising:

upper and lower shielding layers forming a gap therebetween so that said magnetoresistive element is situated within said gap;

upper and lower gap layers provided within said gap so that said magnetoresistive element is interposed between said upper and lower gap layers, said upper gap layer being provided between said upper shielding layer and said magnetoresistive element, said lower gap layer being provided between said lower shielding layer and said magnetoresistive element, said lower gap layer being formed from tantalum; and

an under layer interposed between said lower shielding layer and said lower gap layer, said under layer being formed from a material having a body-centered cubic structure.

2. The current perpendicular type magnetoresistive device as claimed in claim 1, wherein said material having a body-centered cubic structure is a metal selected from a group consisting of tungsten, titanium, chrome, iron, lithium, vanadium and molybdenum or an alloy of a metal selected from said group.

3. The current perpendicular type magnetoresistive device as claimed in claim 1, wherein said upper gap layer is formed from a metal selected from a group consisting of copper, gold, tungsten, ruthenium, platinum, palladium and tantalum or an alloy of a metal selected from said group.

13. The current perpendicular type magnetoresistive device as claimed in claim 1, wherein said magnetoresistive element is one of a tunnel type giant magnetoresistive element and a spin valve type giant magnetoresistive element.

4. A current perpendicular type magnetoresistive device having a magnetoresistive element in which a current flows through the magnetoresistive element in a direction perpendicular to a plane of the magnetoresistive element, said magnetoresistive device comprising:

upper and lower shielding layers forming a gap therebetween so that said magnetoresistive element is situated within said gap;

upper and lower gap layers provided within said gap so that said magnetoresistive element is interposed between said upper and lower gap layers, said upper gap layer being provided between said upper shielding layer and said magnetoresistive element, said lower gap layer being provided between said lower shielding layer and said magnetoresistive element; and

an under layer interposed between said lower shielding layer and said lower gap layer, said under layer being formed from a material having a body-centered cubic structure,

wherein said magnetoresistive element has a predetermined width, and an insulating member is provided on each side of said magnetoresistive element so that said insulating member covers each side of said magnetoresistive element and said insulating member spans from said upper shielding layer to said under layer, and wherein said insulating member includes an insulating layer and a hard magnet layer having hard magnetic properties so that said hard magnet layer is interposed between said insulating layer and said under layer.

5. The current perpendicular type magnetoresistive device as claimed in claim 4, wherein said hard magnet layer is formed from a cobalt based alloy.

6. The current perpendicular type magnetoresistive device as claimed in claim 5, wherein said hard magnet layer is formed from CoPt-siO₂.

7. The current perpendicular type magnetoresistive device as claimed in claim 4, wherein said hard magnet layer is formed from a ferrite based alloy represented by MFe₂O₄, where M is a divalent metal.

8. The current perpendicular type magnetoresistive device as claimed in claim 7, wherein said hard magnet layer is formed from CoFe₂O₄.

9. The current perpendicular type magnetoresistive device as claimed in claim 4, wherein said hard magnet layer is formed from γ

-Fe₂O₃.

10. The current perpendicular type magnetoresistive device as claimed in claim 4, wherein said material having a body-centered cubic structure is a metal selected from a group consisting of tungsten, titanium, chrome, iron, lithium, vanadium and molybdenum or an alloy of a metal selected from said group.

11. The current perpendicular type magnetoresistive device as claimed in claim 4, wherein said upper gap layer is formed from a metal selected from a group consisting of copper, gold, tungsten, ruthenium, platinum, palladium and tantalum or an alloy of a metal selected from said group.

12. The current perpendicular type magnetoresistive device as claimed in claim 4, wherein said magnetoresistive element is one of a tunnel type giant magnetoresistive element and a spin valve type giant magnetoresistive element.