Millimeter wave multilayer assembly

• US 6,249,439 B1
• Filed: 10/21/1999
• Issued: 06/19/2001
• Est. Priority Date: 10/21/1999
• Status: Expired due to Term

• Current Assignee: Hughes Electronics Corporation (AT&T, Inc.)
• Original Assignee: Hughes Electronics Corporation (AT&T, Inc.)
• Inventors: Londre, Dale A., Holloway, Richard A., Nakamura, Lloyd Y., Johnson, Benjamin T., Holmes, Bruce A., DeMore, Walter R.
• Primary Examiner(s): Gaffin, Jeffrey
• Assistant Examiner(s): Vigushin, John B.
• Application Number:
  US09/422,581
• Time in Patent Office: 607 Days
• Field of Search: 361/752, 361/753, 361/762, 361/764, 361/780, 361/794, 361/737, 361/741, 361/761, 361/792, 361/795, 361/796, 361/756, 174/250, 174/255, 174/261, 174/262, 257/664, 257/728, 333/99.R, 333/246, 333/247, 333/248, 333/250, 333/254, 455/327, 455/328, 343/700.MS, 343/702
• US Class Current: 361/752
• CPC Class Codes: H01P 5/08 for linking dissimilar lines or devices H01P1/16, H01P5/04 take precedence; linking lines of the same kind but with different dimensions H01P5/02
• CPC Class Codes: H05K 1/0243 Printed circuits associated with mounted high frequency components
• CPC Class Codes: H05K 1/183 Components mounted in and supported by recessed areas of the printed circuit board
• CPC Class Codes: H05K 2201/10098 Components for radio transmission, e.g. radio frequency identification [RFID] tag, printed or non-printed antennas

Abstract

A millimeter wave multilayer phased array assembly has a multilayer board consisting of several laminated printed wiring boards (PWBs) and a frame having a waveguide input and waveguide output. The PWBs are made of a high frequency laminate material and have a pattern of metalization to perform varying electronic tasks. These tasks include electrical interconnection, RF signal transmission, DC current routing and DC signal routing.

Claims

1. A millimeter wave multilayer assembly, comprising:

a multilayer board, comprising;

a plurality of laminated printed wiring board interconnect layers adjacently disposed, each interconnect layer having a predetermined pattern of interconnect metalization disposed thereon and a plurality of metalized interconnect vias extending therethrough which couple each interconnect metalization of each of said interconnect layers;

a lower ground layer disposed on the interconnect layers, said lower ground layer having substantially continuous metalization disposed thereon and a plurality of metalized lower ground vias extending therethrough;

an RF layer disposed on said lower ground layer, said RF layer having a predetermined pattern of microstrip and stripline metalization disposed thereon and a plurality of metalized RF vias extending therethrough;

an upper ground layer disposed on said RF layer, said upper ground layer having substantially continuous metalization disposed thereon, a plurality of metalized upper ground vias extending therethrough and a stripline to microstrip RF transition area;

a cavity defined in said upper ground layer, RF layer, lower ground layer and at least one top layer of said interconnect layers; and

a microwave and millimeter wave integrated circuit (MMIC) chip disposed in said cavity and connected to said interconnect metalization and said microstrip; and

a frame coupled to said multilayer board, said frame having a waveguide input and a waveguide output, said waveguide input and waveguide output having a ridge probe positioned above said microstrip.

2. A millimeter wave multilayer assembly as recited in claim 1 wherein said upper ground layer, RF layer, lower ground layer and interconnect layers have low loss characteristics for micro and millimeter wavelength electromagnetic radiation.

3. A millimeter wave multilayer assembly as recited in claim 1 wherein said upper ground layer, RF layer, lower ground layer and interconnect layers have low loss characteristics for 43.5 to 45.5 GHz electromagnetic radiation.

4. A millimeter wave multilayer assembly as recited in claim 1 wherein said upper ground layer, RF layer, lower ground layer and interconnect layers comprise Rogers RO4003.

5. A millimeter wave multilayer assembly as recited in claim 1 wherein said metalization is comprised of copper.

6. A millimeter wave multilayer assembly as recited in claim 1 wherein each layer is bonded together.

7. A millimeter wave multilayer assembly as recited in claim 1 further comprising selected passive components disposed within said interconnect layers.

8. A millimeter wave multilayer assembly as recited in claim 1 further comprising passive components disposed on said upper ground layer.

9. A millimeter wave multilayer assembly as recited in claim 1 wherein said frame is bonded to said multilayer board.

10. A millimeter wave multilayer assembly as recited in claim 1 wherein said ridge probe is integral to said frame.

11. A millimeter wave multilayer assembly as recited in claim 1 wherein said frame is thermally conductive and has a coefficient of thermal expansion substantially similar to a coefficient of thermal expansion of said multilayer board.

12. A millimeter wave multilayer assembly as recited in claim 1 further comprising:

at least three MMIC assemblies, each MMIC assembly having an attenuator coupled to a phase shifter coupled to a slave ring, each of said MMIC assemblies being disposed in corresponding adjacent MMIC assembly cavities defined in said upper ground layer, RF layer, lower ground layer at least one top layer of said interconnect layers and coupled to the interconnect metalization and microstrips.

13. A millimeter wave multilayer assembly as recited in claim 12 further comprising:

at least three waveguide outputs, each of said waveguide outputs coupled to a respective one of said MMIC assemblies through said microstrips.

14. A millimeter wave multilayer assembly as recited in claim 12 further comprising:

a divider network disposed in a divider cavity defined in said upper ground layer, RF layer, lower ground layer and at least one top layer of said interconnect layers and coupled to the interconnect metalization and MMIC assemblies.

15. A millimeter wave multilayer assembly as recited in claim 12 further comprising:

at least two low noise amplifiers (LNA), each of said low noise amplifiers disposed in separate LNA cavities defined in said upper ground layer, RF layer, lower ground layer and at least one top layer of said interconnect layers, said LNA coupled to the interconnect metalization and divider network; and

a low noise amplifier bias network disposed in a LNA bias cavity defined in said upper ground layer, RF layer, lower ground layer and at least one top layer of said interconnect layers, said low noise amplifier bias network coupled to the interconnect metalization.

16. A millimeter wave multilayer assembly as recited in claim 12 wherein said MMIC assemblies are mounted on a pedestal disposed in said MMIC assembly cavities.

17. A millimeter wave multilayer assembly as recited in claim 1 further comprising:

a DC connector coupled to said interconnect layer metalization whereby adjacent devices and an originating source are coupled to said millimeter wave multilayer assembly.

18. A satellite communications system comprising:

a ground station;

at least one satellite in communication with said ground station; and

a millimeter wave multilayer assembly positioned in said satellite and having a multilayer board and a frame, said multilayer board comprising;

a plurality of laminated printed wiring board interconnect layers adjacently disposed, each interconnect layer having a predetermined pattern of interconnect metalization disposed thereon and a plurality of metalized interconnect vias extending therethrough which couple each interconnect metalization of each of said interconnect layers;

a lower ground layer disposed on the interconnect layers, said lower ground layer having substantially continuous metalization disposed thereon and a plurality of metalized lower ground vias extending therethrough;

an RF layer disposed on said lower ground layer, said RF layer having a predetermined pattern of microstrip and stripline metalization disposed thereon and a plurality of metalized RF vias extending therethrough;

an upper ground layer disposed on said RF layer, said upper ground layer having substantially continuous metalization disposed thereon, a plurality of metalized upper ground vias extending therethrough and a stripline to microstrip RF transition area;

a cavity defined in said upper ground layer, RF layer, lower ground layer and at least one top layer of said interconnect layers; and

a microwave and millimeter wave integrated circuit (MMIC) chip disposed in said cavity and connected to said interconnect metalization and said microstrip; and

said frame coupled to said multilayer board, said frame having a waveguide input and a waveguide output, said waveguide input and waveguide output having a ridge probe positioned above said microstrip.