Heat-dissipating aluminum silicon carbide composite manufacturing method

• US 6,250,127 B1
• Filed: 10/11/1999
• Issued: 06/26/2001
• Est. Priority Date: 10/11/1999
• Status: Expired due to Fees

• Current Assignee: Polese Company Incorporated
• Original Assignee: Polese Company Incorporated
• Inventors: Rose, David L., Singer, Michael J., Dixon, William, Ocher, Vlad, Rubin, Jack A., Chichra, Walter V., Grodio, Anthony P., Weinshanker, Stuart, Escalante, Henry, Polese, Frank J.
• Primary Examiner(s): TOLAN, EDWARD THOMAS
• Application Number:
  US09/415,698
• Time in Patent Office: 624 Days
• Field of Search: 722/531, 722/56, 722/58, 723/30, 723/31, 723/40, 723/652, 723/792, 727/00, 298/900.3
• US Class Current: 72/256
• CPC Class Codes: C22C 32/0063 based on SiC
• CPC Class Codes: C22F 1/04 of aluminium or alloys based thereon
• CPC Class Codes: H01L 21/4878 Mechanical treatment, e.g. deforming
• CPC Class Codes: H01L 2224/16 of an individual bump connector
• CPC Class Codes: H01L 2224/73253 Bump and layer connectors
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/01019 Potassium [K]
• CPC Class Codes: H01L 2924/01078 Platinum [Pt]
• CPC Class Codes: H01L 2924/1305 Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/13055 Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/13091 Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/16152 Cap comprising a cavity for hosting the device, e.g. U-shaped cap
• CPC Class Codes: H01L 2924/16195 Flat cap [not enclosing an internal cavity]
• CPC Class Codes: Y10S 72/70 Deforming specified alloys or uncommon metal or bimetallic work

Abstract

A process for low cost manufacturing light-weight, heat-dissipating structures such as heatsinks, heat spreaders, and covers or lids for microelectronic components such as flip-chip integrated circuits from difficult-to-machine metal matrix composites such as aluminum silicon carbide (generically referred to as “Al—SiC” or “AlSiC”). The process involves selecting a mass produced quantity of Al—SiC material, forming that material into a thin ribbon, then stamping/coining the ribbon into the structures. The ribbon can be formed by extruding a thin strip from a billet of the Al—SiC material, then plurally rolling it. In this way, commonly available AlSiC composites manufactured in high volume for use in other applications such as cast automotive parts may be used.

Claims

1. A process for forming a plurality of electronic heat dissipating structures which comprises:

selecting an amount of mass produced aluminum silicon carbide metal matrix composite;

forming said amount into a stamp ready ribbon having a thickness between approximately 1 and 2 millimeters;

heating said ribbon to a temperature between approximately 100 and 600 degrees Fahrenheit;

stamping and coining said ribbon to form said structures.

2. The process of claim 1, wherein said forming comprises:

extruding a thin strip from said amount of material; and

flattening said strip to form said ribbon.

3. The process of claim 2, wherein said flattening comprises first hot rolling said strip.

4. The process of claim 3, wherein said flattening further comprises plurally hot rolling said strip.

5. The process of claim 3, wherein said first hot rolling reduces a thickness of said strip by no more than about 50 percent.

6. The process of claim 3, wherein said first hot rolling reduces a thickness of said strip by no more than about 25 percent.

7. The process of claim 2, wherein said flatting comprises a plurality of hot rolling steps wherein each of said plurality of rolling steps reduces the thickness of said strip by no more than about 50 percent.

8. The process of claim 1, wherein said selecting comprises choosing an amount of aluminum silicon carbide having a volume fraction of SiC between about 10 and about 40 percent.

9. The process of claim 3, wherein said first hot rolling comprises heating said strip to at least 700 degrees Fahrenheit.

10. The process of claim 1, wherein said stamping and coining comprises preheating said ribbon to at least 450 degrees Fahrenheit.

11. The process of claim 1, wherein said amount comprises material sufficient to create a plurality of said structures.

12. The process of claim 1, wherein said amount comprises material sufficient to create at least 1000 of said structures.

17. A heat-dissipating electronic component made from the process of claim 1.

13. A process for forming a plurality of heat dissipating flip-chip type lids which comprises:

selecting an amount of mass produced metal matrix composite;

forming said amount into a stamp ready ribbon having a thickness between approximately 1 and 2 millimeters;

heating said ribbon to a temperature of approximately 450 degrees Fahrenheit; and

stamping and coining said ribbon to form said plurality of lids.

14. The process of claim 13, wherein said stamping and coining comprises:

forming a cavity having a depth of less than about 40% of the final thickness of each of said plurality of lids;

wherein said forming avoids creating a bubble on each of said plurality of lids.

15. The process of claim 13, wherein said metal matrix composite comprises a ceramic reinforced metal matrix composite.

16. The process of claim 13, wherein said metal matrix composite comprises aluminum silicon carbide.