Apparatus and method for plasma processing
First Claim
Patent Images
1. A plasma processing apparatus comprising a reaction chamber in which plasma is generated from a reactive gas introduced thereto and a film on a substrate is processed with the plasma generated,wherein main members of the reaction chamber are covered with protective members made of synthetic quartz, wherein an impurity is contained in the synthetic quartz at less than 0.1 ppm.
2 Assignments
0 Petitions
Accused Products
Abstract
A plasma processing apparatus includes a reaction chamber in which plasma is generated from a reactive gas introduced thereto and a film on a substrate is processed with the plasma generated. The main members of the reaction chamber are covered with protective members made of synthetic quartz.
91 Citations
6 Claims
-
1. A plasma processing apparatus comprising a reaction chamber in which plasma is generated from a reactive gas introduced thereto and a film on a substrate is processed with the plasma generated,
wherein main members of the reaction chamber are covered with protective members made of synthetic quartz, wherein an impurity is contained in the synthetic quartz at less than 0.1 ppm.
-
2. A plasma processing apparatus comprising a reaction chamber in which plasma is generated from a reactive gas introduced thereto and a film on a substrate is processed with the plasma generated,
wherein main members of the reaction chamber are covered with protective members made of synthetic quartz, wherein an impurity contained in the synthetic quartz is selected from the group consisting of sodium, calcium, potassium, iron and magnesium.
-
3. A plasma processing apparatus comprising a reaction chamber in which plasma is generated from a reactive gas introduced thereto and a film on a substrate placed on a sample stage is processed with the plasma generated,
wherein a ring member made of synthetic quartz is disposed around a region of the sample stage where the substrate is placed.
-
6. A plasma processing method comprising the steps of:
-
placing a substrate, on the surface of which a silicon dioxide film has been formed, on a substrate placing region of a sample stage provided in a reaction chamber, and disposing a ring member made of synthetic quartz around the substrate placing region of the sample stage;
introducing a reactive gas into the reaction chamber and generating plasma from the reactive gas introduced; and
etching the silicon dioxide film with the plasma.
-
Specification
-
- Resources
Litigation Campaign Assessment
Thank you for your request. You will receive a custom alert email when the Litigation Campaign Assessment is available.
×
-
Current AssigneeMatsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
-
Original AssigneeMatsushita Electric Corporation (Panasonic Holdings Corporation)
-
InventorsTohmori, Yoko, Imai, Shinichi, Okamura, Hideaki, Jiwari, Nobuhiro
-
Primary Examiner(s)DANG, THI D
-
Application NumberUS09/212,411Time in Patent Office923 DaysField of Search156/345, 118/723.E, 118/723.R, 118/728, 216/67, 216/71, 438/710, 438/729, 438/723US Class Current156/345.1CPC Class CodesH01J 37/3244 Gas supply meansH01J 37/32477 characterised by the means ...H01J 37/32559 Protection means, e.g. coat...Y10S 156/916 Differential etching appara...
