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Surface planarization of high temperature superconductors

  • US 6,251,835 B1
  • Filed: 05/06/1998
  • Issued: 06/26/2001
  • Est. Priority Date: 05/08/1997
  • Status: Expired due to Term
First Claim
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1. A method of processing a substrate comprising a high temperature crystalline superconductor surface, having a surface roughness R0 and a transition temperature Tc, the method comprising:

  • (a) contacting the surface of the substrate with gas cluster ions, said cluster ions comprising at least one atomic species different from at least one atomic species in said superconductor surface, to reduce both the surface roughness and the crystallinity of the surface and to impair the high temperature superconducting properties of said surface; and

    (b) processing the surface of the substrate to restore the crystallinity and to at least partially restore the high temperature superconductivity of the surface.

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