Method for sectioning a semiconductor wafer with FIB for viewing with SEM

• US 6,252,227 B1
• Filed: 10/19/1998
• Issued: 06/26/2001
• Est. Priority Date: 10/19/1998
• Status: Expired due to Fees

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Chen, At Chuan, Chen, Huey Ling, Chen, Mei Fun, Tseng, Fouriers
• Primary Examiner(s): Berman, Jack
• Assistant Examiner(s): SMITH, JOHNNIE L
• Application Number:
  US09/174,653
• Time in Patent Office: 981 Days
• Field of Search: 250/310, 250/201.4, 156/643, 356/357, 438/723, 430/320
• US Class Current: 250/307
• CPC Class Codes: G01N 23/04 and forming images of the material

Abstract

An improved method for sectioning a semiconductor wafer using a focused ion beam (FIB) apparatus permits a clearer image of the site of the cut to be formed from secondary electrons produced by the beam. The clearer image helps the operator of the FIB apparatus to make a more accurate cut. Before the FIB cut is made, a laser is used to cut into the wafer to expose the lowermost layer of silicon dioxide. This oxide and any oxide splatters from the laser cut are then removed with an oxide etcher. The FIB cut can then be made without splattering silicon dioxide over the area being viewed. A low beam current is used for the FIB cut.

Claims

1. A method for preparing a semiconductor wafer for viewing with an SEM at a selected site on the wafer, the wafer having a substrate of semiconductor material, and a layer of oxide overlying the substrate that may form a residue during an operation to cut a wafer section with a focused ion beam (FIB) apparatus and thereby interfere with viewing the selected site during the operation to cut the section with the FIB apparatus, the method comprising the following steps,

if the uppermost layer of the wafer is not a cap of polysilicon or silicon nitride, forming a cap of polysilicon or silicon nitride on the uppermost layer of the wafer, then,

cutting a hole at the selected site through the cap and any oxide layers between the cap and the layer of oxide overlying the substrate, then,

removing the oxide layer, and then

using an FIB apparatus to cut the section while viewing an image of the site formed by secondary electrons from the FIB apparatus, the image being free of oxide deposits that otherwise may occur when cutting the section with the FIB apparatus.

2. The method of claim 1 where the step of cutting the hole above the oxide layer includes cutting said hole with a laser.

3. The method of claim 2 wherein the step of removing the oxide includes removing the oxide with an etcher.

4. The method of claim 3 where the step of cutting the hole above the oxide layer with a laser includes the incidental step of producing oxide splatters that interfere with viewing during a cut with an FIB apparatus.

5. The method of claim 4 wherein the step of removing the oxide includes etching the wafer to remove the oxide splatters produced by the step of cutting the hole above the oxide layer.

6. The method of claim 5 wherein the oxide etcher is BOE.

7. The method of claim 5 wherein the oxide etcher is slope.

8. The method of claim 5 wherein the oxide etcher is hydrogen fluoride.

9. The method of claim 5 wherein the step of using an FIB apparatus to cut the section includes operating the FIB apparatus at a current of less than 350 pico amperes.