Packaged die PCB with heat sink encapsulant
First Claim
1. A semiconductor assembly comprising:
- a substrate;
a semiconductor chip having a first surface and a second surface wherein the first surface is attached to and in electrical communication with said substrate;
a barrier material adhered to a periphery of the semiconductor chip second surface substantially forming a wall wherein said barrier material substantially extends to and contacts said substrate;
a recess defined by said wall about said periphery of the semiconductor chip second surface and the semiconductor chip second surface; and
a heat-dissipating material disposed within said recess.
5 Assignments
0 Petitions
Accused Products
Abstract
An apparatus and a method for providing a heat sink on an upper surface of a semiconductor chip by placing a heat-dissipating material thereon which forms a portion of a glob top. The apparatus comprises a semiconductor chip attached to and in electrical communication with a substrate. A barrier glob top material is applied to the edges of the semiconductor chip on the surface (“opposing surface”) opposite the surface attached to the substrate to form a wall around a periphery of an opposing surface of the semiconductor chip wherein the barrier glob top material also extends to contact and adhere to the substrate. The wall around the periphery of the opposing surface of the semiconductor chip forms a recess. A heat-dissipating glob top material is disposed within the recess to contact the opposing surface for the semiconductor chip.
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Citations
69 Claims
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1. A semiconductor assembly comprising:
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a substrate;
a semiconductor chip having a first surface and a second surface wherein the first surface is attached to and in electrical communication with said substrate;
a barrier material adhered to a periphery of the semiconductor chip second surface substantially forming a wall wherein said barrier material substantially extends to and contacts said substrate;
a recess defined by said wall about said periphery of the semiconductor chip second surface and the semiconductor chip second surface; and
a heat-dissipating material disposed within said recess. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method for producing a semiconductor assembly said method comprising;
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providing a substrate;
providing a semiconductor chip having a first surface and a second surface;
attaching said semiconductor chip first surface to said substrate;
forming an electrical communication between said semiconductor chip and said substrate;
forming a wall substantially around a periphery of the semiconductor chip second surface with a barrier material wherein said wall and said semiconductor chip second surface define a recess;
extending said barrier material to contact said substrate; and
disposing a heat-dissipating material substantially within said recess. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16)
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17. A semiconductor assembly comprising:
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a semiconductor chip having a first surface and a second surface wherein the first surface is attached to and in electrical communication with a substrate;
a barrier material adhered to a periphery of the semiconductor chip second surface substantially forming a wall a portion of said wall, extending beyond said semiconductor chip to form a recess located above said second surface of said semiconductor chip wherein said barrier material substantially extends to and contacts said substrate; and
a heat-dissipating material disposed within said recess. - View Dependent Claims (18, 19, 20, 21, 22, 23, 24)
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25. A method for producing semiconductor assembly said method comprising:
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providing a substrate;
providing a semiconductor chip having a first surface and a second surface;
attaching said semiconductor chip first surface to said substrate;
disposing an underfill material substantially between said substrate and said semiconductor chip;
forming an electrical communication between said semiconductor chip and a substrate;
forming a wall substantially around a periphery of the semiconductor chip second surface with a barrier material wherein said wall and said semiconductor chip second surface define a recess;
extending said barrier material to contact said substrate; and
disposing a heat-dissipating material substantially within said recess. - View Dependent Claims (26, 27, 28, 29, 30, 31)
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32. A semiconductor assembly comprising:
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a substrate;
a semiconductor chip having a first surface and a second surface wherein the first surface is attached to and in electrical communication with said substrate;
an underfill material substantially filling a space between said substrate and said semiconductor chip;
a barrier material substantially adhered to a periphery of the semiconductor chip second surface substantially forming a wall a portion of said wall, extending beyond the said semiconductor chip to form a recess located above said second surface of said semiconductor chip wherein said barrier material substantially extends to and contacts said substrate; and
a heat-dissipating material disposed within said recess. - View Dependent Claims (33, 34, 35, 36, 37, 38)
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39. A semiconductor assembly comprising:
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a substrate;
at least one semiconductor chip having a first surface and a second surface wherein the first surface is attached to and in electrical communication with said substrate;
a barrier material adhered to a periphery of the semiconductor chip second surface substantially forming a wall wherein said barrier material substantially extends to and contacts said substrate;
a recess defined by said wall about said periphery of the semiconductor chip second surface and the semiconductor chip second surface; and
a heat-dissipating material disposed within said recess. - View Dependent Claims (40, 41, 42, 43, 44, 45, 46)
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47. A semiconductor assembly comprising:
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a substrate;
at least two semiconductor chips, each chip having a first surface and a second surface wherein the first surface is attached to and in electrical communication with said substrate;
a barrier material adhered to a periphery of said each semiconductor chip second surface substantially forming a wall wherein said barrier material substantially extends to and contacts said substrate;
a recess defined by said wall; and
a heat-dissipating material disposed within said recess of said each semiconductor chip. - View Dependent Claims (48, 49, 50, 51, 52, 53, 54)
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55. A semiconductor assembly comprising:
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a substrate a plurality of semiconductor chips, each chip having a first surface and a second surface wherein the first surface is attached to and in electrical communication with said substrate;
a barrier material adhered to a periphery of said each semiconductor chip second surface substantially forming a wall wherein said barrier material substantially extends to and contacts said substrate;
a recess defined by said wall; and
a heat-dissipating material disposed within said recess of said each semiconductor chip. - View Dependent Claims (56, 57, 58, 59, 60, 61, 62)
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63. A method for producing a semiconductor assembly said method comprising:
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providing a substrate;
providing a plurality of semiconductor chips each semiconductor chip having a first surface and a second surface;
attaching said semiconductor chip first surface of said each semiconductor chip to said substrate;
disposing an underfill material substantially between said substrate and said each semiconductor chip;
forming an electrical communication between said each semiconductor chip and a substrate;
forming a wall substantially around a periphery of the semiconductor chip second surface of said each semiconductor chip with a barrier material wherein said wall and said semiconductor chip second surface of said each semiconductor chip define a recess;
extending said barrier material to contact and adhere to said substrate; and
disposing a heat-dissipating material substantially within said recess. - View Dependent Claims (64, 65, 66, 67, 68, 69)
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Specification