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Micro-void detection

  • US 6,253,621 B1
  • Filed: 08/31/1999
  • Issued: 07/03/2001
  • Est. Priority Date: 08/31/1999
  • Status: Expired due to Fees
First Claim
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1. A method for analyzing a semiconductor device having conductive structure, the method comprising:

  • generating acoustic energy in the device;

    detecting an acoustic wave;

    calculating an index of refraction of a portion of the conductive structure as a function of the wave; and

    using the calculated index of refraction and detecting at least one defect in the conductive structure.

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