Diffuser with spiral opening pattern for an electroplating reactor vessel

• US 6,254,742 B1
• Filed: 07/12/1999
• Issued: 07/03/2001
• Est. Priority Date: 07/12/1999
• Status: Expired due to Term

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Semitool Incorporated (Applied Materials Incorporated)
• Inventors: Simchuk, Jerry, Thompson, Raymon F., Hanson, Kyle M., Weaver, Robert A.
• Primary Examiner(s): Gorgos, Kathryn
• Assistant Examiner(s): Nicolas, Wesley A.
• Application Number:
  US09/351,864
• Time in Patent Office: 722 Days
• Field of Search: 204/242, 204/275.1, 204/279, 204/DIG.7, 205/148, 205/96, 205/123
• US Class Current: 204/279
• CPC Class Codes: C25D 17/001 Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
• CPC Class Codes: Y10S 204/07 Current distribution within the bath

Abstract

In an electroplating reactor for plating a spinning wafer, a diffusion plate is supported above an anode located within a cup filled with process fluid within the reactor. The diffusion plate includes a plurality of openings which are arranged in a spiral pattern. The openings allow for an improved plating thickness distribution on the wafer surface. The openings can be elongated slots curved along the direction of the spiral path.

Claims

1. In a reactor for processing a semiconductor wafer, having a vessel, a cup within the vessel for holding a level of process fluid, an anode arranged at a position within the cup, and a wafer support for holding a wafer in the second position spaced from the anode, the improvement comprising:

a diffusion plate member arranged between the anode and the wafer, said diffusion plate member having a plurality of elongated and curved openings arranged in a spiral pattern, at least a major subset of radially adjacent openings of the plurality of elongated and curved openings having substantially identical arc lengths, said wafer support and said diffusion plate member arranged to be rotated relative to each other about a central axis of the spiral pattern.

2. The improvement according to claim 1, comprising a support structure held at an elevation within said vessel, wherein said support structure includes plural alternate mounting locations for said diffusion plate member at different vertical positions with respect to said cup.

3. The improvement according to claim 2 wherein said support structure comprises a mounting ring having a plurality of annular grooves on an inside surface of said mounting ring at incremental elevations for engaging an edge of said diffusion plate member.

4. The improvement according to claim 3, wherein said reactor includes an anode shield mounted below said anode, and said shield includes a plurality of brackets extending upwardly to an elevation above said anode and said mounting ring and said brackets are configured to provide bayonet connections therebetween.

5. The improvement according to claim 3, wherein said diffusion plate member has rounded edges to enhance snap-fitting of said diffusion plate into a selected one of said annular grooves.

6. The improvement according to claim 3, wherein said support structure includes an annular shield overlying said mounting ring and having a central opening smaller than said inside surface of said mounting ring.

7. The improvement according to claim 6, wherein said annular shield includes plural tool engageable recesses for receiving a hook member of a tool from above.

8. A reactor for electroplating a wafer, comprising:

a vessel;

a rotor having wafer holding structure for holding a wafer within said vessel and a rotary device for spinning the wafer;

a cup for holding a supply of process fluids, said cup held within said vessel;

an anode located within said cup and having a top surface and a bottom surface; and

a diffusion plate member located between said anode and said wafer holding structure, said diffusion plate member having a plurality of elongated and curved holes arranged in a spiral pattern, at least a major subset of radially adjacent holes having substantially identical arc lengths.

9. The reactor according to claim 8 and further comprising a diffuser support structure held at an elevation within said vessel, wherein said diffuser support structure includes plural alternate mounting locations for said diffusion plate member at different vertical positions with respect to said cup.

10. The reactor according to claim 9, wherein said diffuser support structure includes an annular shield overlying said mounting ring, said annular shield having a central opening smaller than said inside surface of said mounting ring.

11. The reactor according to claim 10, wherein said annular shield includes plural tool engageable recesses for receiving a hook member of a tool.

12. The reactor according to claim 9 wherein said diffuser support structure comprises a mounting ring having a plurality of annular grooves on an inside surface of said mounting ring at incremental elevations for engaging an edge of said diffusion plate member.

13. The reactor according to claim 12, wherein said diffusion plate member comprises rounded edges that facilitate snap-fitting of said diffusion plate into a selected one of said annular grooves.

14. The reactor according to claim 8, wherein said reactor further comprises an anode shield mounted below said anode, said shield comprising a plurality of brackets extending beyond said anode, said mounting ring and said brackets being configured to form a bayonet connection therebetween.

15. In a reactor for processing a semiconductor wafer, having a vessel, a cup within the vessel for holding a level of process fluid, an anode arranged at a position within the cup, and a wafer support for holding a wafer in the second position spaced from the anode, the improvement comprising:

a diffusion plate member arranged between the anode and the wafer, said diffusion plate member having a plurality of openings arranged in a spiral pattern, said wafer support and said diffusion plate member arranged to be rotated relative to each other;

a support structure held at an elevation within said vessel, said support structure having plural alternate mounting locations for said diffusion plate member at different vertical positions with respect to said cup, said support structure further comprising a mounting ring having a plurality of annular grooves on an inside surface of said mounting ring at incremental elevations for engaging an edge of said diffusion plate member.

16. The improvement according to claim 15, wherein said support structure includes an annular shield overlying said mounting ring and having a central opening smaller than said inside surface of said mounting ring.

17. The improvement according to claim 16, wherein said annular shield includes plural tool engageable recesses for receiving a hook member of a tool from above.

18. The improvement according to claim 15, wherein said diffusion plate member has rounded edges to enhance snap-fitting of said diffusion plate into a selected one of said annular grooves.

19. The improvement according to claim 15, wherein said reactor includes an anode shield mounted below said anode, and said shield includes a plurality of brackets extending upwardly to an elevation above said anode and said mounting ring and said brackets are configured to provide bayonet connections therebetween.