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Method for applying a barrier layer to a silicon based substrate

  • US 6,254,935 B1
  • Filed: 04/15/1999
  • Issued: 07/03/2001
  • Est. Priority Date: 04/15/1999
  • Status: Expired due to Term
First Claim
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1. A method of preparing an article comprising the steps of:

  • (a) providing a substrate comprising silicon;

    (b) heating the silicon containing substrate to a temperature T of greater than or equal to about 1100°

    C.;

    (c) applying a barrier layer comprising barium-strontium aluminosilicate to the silicon containing substrate at the temperature T to provide a coated substrate;

    (d) thereafter holding the coated substrate at the temperature T for a time period of greater than or equal to about 15 minutes; and

    (e) cooling the coated substrate wherein the cooled coated substrate, prior to a subsequent heat treating, has a barrier layer having a crystalline structure of at least about 80% by volume.

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