Process for modulating interferometric lithography patterns to record selected discrete patterns in photoresist

• US 6,255,038 B1
• Filed: 02/16/1999
• Issued: 07/03/2001
• Est. Priority Date: 06/10/1996
• Status: Expired due to Fees

• Current Assignee: DMG Technologies, Inc.
• Original Assignee: Optical Switch Corporation
• Inventors: Hobbs, Douglas S.
• Primary Examiner(s): WU, SHEAN CHIU
• Application Number:
  US09/202,572
• Time in Patent Office: 868 Days
• Field of Search: 430/5, 430/313, 430/316, 430/311, 430/312, 430/314, 430/323, 430/394, 430/396
• US Class Current: 430/316
• CPC Class Codes: G03F 7/001 Phase modulating patterns, e.g. refractive index patterns
• CPC Class Codes: G03F 7/2022 Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
• CPC Class Codes: G03F 7/265 Selective reaction with inorganic or organometallic reagents after image-wise exposure, e.g. silylation
• CPC Class Codes: G03F 7/38 Treatment before imagewise removal, e.g. prebaking G03F7/265 takes precedence
• CPC Class Codes: G03F 7/70408 Interferometric lithography; Holographic lithography; Self-imaging lithography, e.g. utilizing the Talbot effect
• CPC Class Codes: G03F 7/70466 Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature stitching G03F7/70475

Abstract

A double exposure process is disclosed whereby a first exposure produced by conventional photolithographic techniques generates a latent negative image in a photoresist etch mask layer (22), the image subsequently employed to modulate a second exposure generated by the multiple beam interferometric lithography technique. Periodic surface relief structures (80) patterned by the second exposure and formed after development of the exposed photoresist material, are restricted to regions (52) defined by the initial exposure, with the photoresist material (54) outside these regions remaining unmodulated, or devoid of the periodic structures (80), and suitable for use as a mask in a subsequent etching process.

Claims

1. A method for confining interference lithography patterning to discrete areas of a photoresist while maintaining a surrounding photoresist region that bounds the discrete areas, comprising the steps of:

(a) exposing the surrounding photoresist region without exposing the discrete areas of the photoresist;

(b) treating the photoresist to make the exposed surrounding photoresist region insensitive to further exposure and insoluble in a photoresist developer;

(c) selectively exposing the discrete areas of the photoresist using interference lithography; and

(d) developing the photoresist to remove exposed photoresist within the discrete areas to form a repetitive pattern within the discrete areas without removing the surrounding photoresist region, such that the surrounding photoresist region remains as a protective etch mask that confines subsequent etch processing of an underlying layer to the discrete areas.

2. The method of claim 1, wherein step (a) includes exposing the surrounding photoresist region using an exposure technique other than interference lithography.

3. The method of claim 1, wherein step (a) includes using a shadow mask to prevent exposure of the discrete areas while exposing the surrounding photoresist region.

4. The method of claim 1, wherein step (a) includes exposing the surrounding photoresist region using and electron beam.

5. The method of claim 1, wherein step (a) includes exposing the surrounding photoresist region with a laser beam.

6. The method of claim 1, wherein step (b) includes applying a fluid reactive agent to the photoresist.

7. The method of claim 6, wherein the fluid reactive agent is ammonia vapor.

8. The method of claim 1, wherein step (b) includes heating the photoresist to a temperature of at least 100°

C.

9. The method of claim 1, wherein the photoresist is part of a layered structure that includes discrete electrode regions formed in a lower layer, wherein the discrete regions of the photoresist are aligned with the electrode regions and the protective etch mask confines etching to portions of layers underlying the discrete regions and overlying the discrete electrode regions.

10. The method of claim 9, further comprising forming a field emitter display by etching emitter tips in portions of the layered structure underlying the discrete areas of the photoresist in correspondence with the discrete electrode regions.