Amorphous dielectric capacitors on silicon

• US 6,255,122 B1
• Filed: 04/27/1999
• Issued: 07/03/2001
• Est. Priority Date: 04/27/1999
• Status: Expired due to Fees

• Current Assignee: GlobalFoundries, Inc.
• Original Assignee: International Business Machines Corporation
• Inventors: Shaw, Thomas McCarroll, Neumayer, Deborah Ann, Laibowitz, Robert Benjamin, Duncombe, Peter Richard
• Primary Examiner(s): Bowers, Charles
• Assistant Examiner(s): Brewster, William M.
• Application Number:
  US09/300,185
• Time in Patent Office: 798 Days
• Field of Search: 438/240, 438/3, 438/393, 438/482, 438/511
• US Class Current: 438/3
• CPC Class Codes: H01L 28/55 with a dielectric comprising a perovskite structure material

Abstract

High-capacity capacitors and gate insulators exhibiting moderately high dielectric constants with surprisingly low leakage using amorphous or low temperature films of perovskite type oxides including a titanate system material such as barium titanate, strontium titanate, barium strontium titanate (BST), lead titanate, lead zirconate titanate, lead lanthanum zirconate titanate, barium lanthanum titanate, a niobate, aluminate or tantalate system material such as lead magnesium niobate, lithium niobate lithium tantalate, potassium niobate and potassium tantalum niobate, a tungsten-bronze system material such as barium strontium niobate, lead barium niobate, barium titanium niobate, and Bi-layered perovskite system material such as strontium bismuth tantalate, bismuth titanate deposited directly on a silicon surface at temperatures about 450° C. or less.

Claims

1. A capacitor comprising an amorphous dielectric having a dielectric constant of 10 or greater deposited directly on a silicon-containing electrode, wherein said amorphous dielectric material is formed under conditions that minimize formation of any interfacial layers or grain boundaries on said silicon-containing substrate.

2. The capacitor of claim 1 wherein the amorphous dielectric material is fabricated at temperatures about 450°

C. or less.

3. The capacitor of claim 1 wherein the amorphous dielectric material is a thin film having a thickness of from about 1 to about 2000 nm.

4. The capacitor of claim 1 wherein said amorphous dielectric material is a perovskite-type oxide having the formula ABO₃, wherein B is at least one acidic oxide containing a metal from Group IVB, VB, VIB, VIIB, IIIA and IB of the Periodic Table of Elements and A is at least one additional cation having a positive formal charge of from about 1 to about 3.

5. The capacitor of claim 4 wherein said amorphous dielectric material is a titanate, niobate, aluminate or tantalate system material, a tungsten-bronze system material or a Bi-layered system material.

6. The capacitor of claim 5 wherein said amorphous dielectric material is barium strontium titanate, barium titanate, strontium titanate, lead zirconium titanate, barium zirconium titanate, tantalum titanate, lead lanthanum titanate, barium strontium niobate, barium lanthanum titanate, lanthanum aluminate, yttrium aluminate, strontium aluminum tantalate or barium titanium niobate.

7. The capacitor of claim 6 wherein said amorphous dielectric is barium strontium titanate.

8. The capacitor of claim 1 wherein a top conductive electrode is formed on said amorphous dielectric material.

9. The capacitor of claim 8 wherein said top conductive electrode is composed of a conductive material selected from the group consisting of a noble metal, a noble metal oxide, a conductive oxide and mixtures thereof.

10. The capacitor of claim 8 wherein a passivating layer is formed on said top conductive electrode.

11. A method for forming a capacitor comprising an amorphous dielectric material having a dielectric constant of 10 or greater deposited directly on a silicon-containing material comprising the steps of:

(a) preparing a bottom electrode, said bottom electrode being composed of Si or a Si-containing material;

(b) forming an amorphous dielectric material on top of the bottom electrode;

(c) annealing the amorphous dielectric material at a temperature which is effective in improving the quality as well as the dielectric constant of the amorphous dielectric material; and

(d) fabricating a top conductive electrode on said annealed amorphous dielectric material.

12. The method of claim 11 wherein steps (b) and (c) are carried out at temperatures of about 450°

C. or less.

13. The method of claim 11 wherein step (b) is carried out by chemical vapor deposition, plasma assisted chemical vapor deposition, low pressure chemical vapor deposition, high density plasma chemical vapor deposition, metal organic decomposition, sol-gel, evaporation, sputtering, or pulsed laser deposition.

14. The method of claim 11 further comprising (e) forming a passivating layer on said top conductive electrode.

15. A gate insulator for use in a transistor comprising an amorphous dielectric material having a dielectric constant of 10 or greater.

16. The gate insulator of claim 15 wherein the amorphous dielectric material is fabricated at temperatures about 450°

C. or less.

17. The gate insulator of claim 15 wherein the amorphous dielectric material is a thin film having a thickness of from about 1 to about 2000 nm.

18. The gate insulator of claim 15 wherein said amorphous dielectric material is a perovskite-type oxide having the formula ABO₃ wherein B is at least one acidic oxide containing a metal from Group IVB, VB, VIB, VIIB, IIIA and IB of the Periodic Table of Elements and A is at least one additional cation having a positive formal charge of from about 1 to about 3.

19. The gate insulator of claim 18 wherein said amorphous dielectric material is a titanate, niobate, aluminate or tantalate system material, a tungsten-bronze system material or a Bi-layered system material.

20. The gate insulator of claim 19 wherein said amorphous dielectric material is barium strontium titanate, barium titanate, strontium titanate, lead zirconium titanate, barium zirconium titanate, tantalum titanate, lead lanthanum titanate, barium strontium niobate, barium lanthanum titanate, lanthanum aluminate, yttrium aluminate, strontium aluminum tantalate or barium titanium niobate.

21. The gate insulator of claim 20 wherein said amorphous dielectric material is barium strontium titanate.

22. A method of fabricating a transistor comprising an amorphous dielectric constant material as a gate insulator comprising the steps of:

(a) forming an amorphous dielectric material on a structure containing a semiconducting electrode, said amorphous dielectric material having a dielectric constant of 10 or above;

(b) annealing the amorphous dielectric material at a temperature which is effective in improving the quality as well as the dielectric constant of the amorphous dielectric material; and

(c) forming a gate conductor on said annealed amorphous dielectric material.

23. The method of claim 22 wherein steps (a) and (b) are carried out at temperatures of about 450°

C. or less.

24. The method of claim 22 wherein step (a) is carried out by chemical vapor deposition, plasma assisted chemical vapor deposition, low pressure chemical vapor deposition, high density plasma chemical vapor deposition, metal organic decomposition, sol-gel, evaporation, sputtering, or pulsed laser deposition.

25. The method of claim 22 further comprising (d) forming a passivating layer on said gate conductor.

26. The method of claim 22 wherein said semiconducting electrode is silicon, a silicon containing material, a semiconducting organic or inorganic material.