Thin film transistor array panel and a method for manufacturing the same

• US 6,255,130 B1
• Filed: 09/07/1999
• Issued: 07/03/2001
• Est. Priority Date: 11/19/1998
• Status: Expired due to Term

• Current Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Kim, Dong-Gyu
• Primary Examiner(s): Smith, Matthew
• Assistant Examiner(s): YEVSIKOV, VICTOR V
• Application Number:
  US09/391,661
• Time in Patent Office: 665 Days
• Field of Search: 257/72, 257/59, 438/30, 438/158, 438/159, 438/720, 438/162
• US Class Current: 438/30
• CPC Class Codes: G02F 1/136227 Through-hole connection of the pixel electrode to the active element through an insulation layer
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1288 employing particular masking sequences or specially adapted masks, e.g. half-tone mask

Abstract

Disclosed is a simplified method for manufacturing liquid crystal displays. A gate wire including a gate line, a gate pad, and a gate electrode is formed on the substrate. A gate insulating layer, a semiconductor layer, and an ohmic contact layer are sequentially deposited, and a photoresist layer is coated thereon. The photoresist layer is exposed to light through a mask and developed to form a photoresist pattern. At this time, the first portion of the photoresist pattern that is located between the source electrode and the drain electrode is thinner than the second portion that is located on the data wire, and the rest of the photoresist layer are wholly removed. The thin portion is made by controlling the exposure or by a reflow process to form a thin portion. And exposure is controlled by using a mask that has a slit, a small pattern smaller than the resolution of the exposure device, or a partially transparent layer. Next, the exposed portions of conductor layer are removed by wet etch or dry etch, thereby the ohmic contact layer thereunder is exposed. Then the exposed ohmic contact layer and the semiconductor layer thereunder are removed by dry etching along with the first portion of the photoresist layer. The residue of the photoresist layer is removed by ashing. Source/drain electrodes are separated by removing the portion of the conductor layer at the channel and the ohmic contact layer pattern thereunder. Then, the second portion of the photoresist layer is removed, and a passivation layer, a pixel electrode, a redundant gate pad, and a redundant data pad are formed.

Claims

1. A method for manufacturing a thin film transistor array panel, comprising the steps of:

forming a gate wire including a gate line and a gate electrode connected to the gate line on an insulating substrate;

forming a gate insulating layer covering the gate wire;

forming a semiconductor pattern on the gate insulating layer;

forming an ohmic contact layer pattern on the semiconductor pattern;

forming a data wire including a source electrode and a drain electrode that are made of the same layer on the ohmic contact layer and separated from each other, and a data line connected to the source electrode; and

forming a passivation layer covering the data wire,

wherein the source electrode and the drain electrode are separated by a photolithography process using a photoresist pattern, and the photoresist pattern has a first portion having a first thickness and located at least between the source electrode and the drain electrode, a second portion having a second thickness thicker than the first thickness, and a third portion having a third thickness thinner than the first thickness.

2. The method of claim 1, further comprising a step of forming a pixel electrode connected to the drain electrode.

3. The method of claim 2, wherein the thin film transistor array panel is used in a liquid crystal display.

4. The method of claim 1, wherein the third thickness is substantially zero.

5. The method of claim 1, wherein a mask used for forming the photoresist pattern has a first, a second, and a third part, the transmittance level of the third part is higher than the first and the second parts, the transmittance level of the first part is higher than the second part, the photoresist pattern is made of positive photoresist, and the mask is aligned such that the first, the second, and the third parts respectively face the first, the second, and the third portions of the photoresist pattern in an exposing step.

6. The method of claim 5, wherein the first part partially transmits light, the second part is substantially opaque, and the third part is substantially transparent.

7. The method of claim 5, wherein the mask further comprises a fourth part located between the first part and the third part and having a transmittance value between the transmittance value of the first part and the transmittance value of the third part.

8. The method of claim 7, wherein the first part and the fourth part of the mask include a partially transparent layer.

9. The method of claim 8, wherein the widths or the lengths of the partially transparent layers of the first part and the fourth part are different from each other.

10. The method of claim 7, wherein the first part and the fourth part of the mask include a plurality of slit patterns smaller than the resolution of the exposure device used in the photolithography process.

11. The method of claim 10, wherein the widths of the slit patterns of the fourth part is equal to or less than that of the slit patterns of the first part, and the interval between the slit patterns of the fourth part is equal to or larger than that between the slit patterns of the first part.

12. The method of claim 7, wherein the interval of the fourth part is wider than that of the first part.

13. The method of claim 7, wherein the first part and the fourth part are patterned to have slits, wherein the interval of the slits in the first part is smaller than that of the fourth part.

14. The method of claim 7, wherein the first part and the fourth part include a slit pattern having a bar shape.

15. The method of claim 7, wherein the first part and the fourth part include a fifth part having an interval wider than that of the remaining portion of the first part and the fourth part.

16. The method of claim 5, the first part of the mask has one shape selected from a group of shapes comprising a line, a square, an open-ring or an angled portion.

17. The method of claim 1, wherein the first portion is formed by reflow.

18. The method of claim 1, wherein the thickness of the first portion is less than a half of the thickness of the second portion.

19. The method of claim 18, wherein the thickness of the second portion is 1 μ

m to 2 μ

m.

20. The method of claim 19, wherein the thickness of the first portion is less than 6,000 Å

.

21. The method of claim 1, wherein the data wire, the ohmic contact layer pattern, and the semiconductor pattern are formed in one photolithography process.

22. The method of claim 21, wherein the steps of forming the gate insulating layer, the semiconductor pattern, the ohmic contact layer pattern, and the data wire comprise:

depositing the gate insulating layer, a semiconductor layer, an ohmic contact layer, and a conductor layer;

coating a photoresist layer on the conductor layer;

exposing the photoresist layer to light through a mask;

forming the photoresist pattern such that the second portion lies on the data wire by developing the photoresist layer;

forming the data wire, the ohmic contact layer pattern, and the semiconductor pattern respectively made of the conductor layer, the ohmic contact layer and the semiconductor layer by removing a portion of the conductor layer under the third portion, the semiconductor layer and the ohmic contact layer thereunder, the first portion, the conductor layer and the ohmic contact layer under the first portion, and a partial thickness of the second portion; and

removing the photoresist pattern.

23. The method of claim 21, wherein the step of forming the data wire, the ohmic contact layer pattern and the semiconductor pattern comprises;

removing the portion of the conductor layer under the third portion by dry etching or wet etching to expose the ohmic contact layer;

dry etching the ohmic contact layer under the third portion, the semiconductor layer thereunder and the first portion to obtain the completed semiconductor pattern along with exposing the gate insulating layer under the third portion and the conductor layer under the first portion; and

removing the conductor layer under the first portion and the ohmic contact layer thereunder to obtain the completed data wire and the completed ohmic contact layer pattern.

24. The method of claim 21, further comprising the step of etching the gate insulating layer under the third portion in the step of forming the data wire, the ohmic contact layer pattern and the semiconductor pattern.

25. The method of claim 1, wherein the portion between the source electrode and the drain electrode has one shape selected from a group of shapes comprising a linear-shape, a semicircular-shape having a gentle curve and a hook-shape having an angled corner portion.

26. The method of claim 25, wherein the conductor layer of the angled corner portion, the semiconductor layer and the ohmic contact layer thereunder are removed with the third portion.

27. The method of claim 1, wherein the gate wire further includes a gate pad which is connected to and receives a signal from an external circuit, and the data wire further includes a data pad which is connected to and receives a signal from an external circuit, and the passivation layer pattern and the gate insulating layer have a first contact hole and a second contact hole respectively exposing the gate pad and the data pad, and

wherein the method further comprises the step of:

forming a redundant gate pad and a redundant data pad that are made of the same layer as the pixel electrode and are respectively connected to the gate pad and the data pad through the first contact hole and the second contact hole.

28. The method of claim 1, wherein the passivation layer pattern is made of the photoresist pattern.

29. The method of claim 28, wherein the gate wire further includes a gate pad that is connected to and receives a signal from an external circuit and the data wire further includes a data pad that is connected to and receives a signal from an external circuit, and

wherein the steps of forming the gate insulating layer, the semiconductor pattern, the ohmic contact layer pattern, the data wire, the passivation layer pattern and the pixel electrode further comprises:

depositing the gate insulating layer, a semiconductor layer, and an ohmic contact layer;

forming the data wire, a conductive bridge connecting the drain electrode to the source electrode, an ohmic contact bridge under the conductive bridge and the semiconductor pattern by patterning the conductor layer, the ohmic contact layer, and the semiconductor layer respectively;

coating a photoresist layer;

exposing the photoresist layer to light through a mask;

forming a photoresist pattern such that third portion is located on the gate pad, the data pad, and the drain electrode, and the second portion is located on the conductive bridge by developing the photoresist layer;

exposing the gate pad by removing the gate insulating layer on the gate pad;

forming the pixel electrode, a redundant gate pad and a redundant data pad that respectively cover the drain electrode, the gate pad and the data pad on the photoresist pattern;

removing the first portion to expose the conductive bridge; and

removing the conductive bridge and the ohmic contact bridge to complete the data wire and the ohmic contact layer pattern.

30. The method of claim 1, wherein the gate wire further includes a gate pad that is connected to and receives a signal from an external circuit and the data wire further includes a data pad that is connected to and receives a signal from a external circuit, and

wherein the steps of forming the gate insulating layer, the semiconductor pattern, the ohmic contact layer pattern, the data wire, the passivation layer pattern and the pixel electrode further comprises:

depositing the gate insulating layer, a semiconductor layer and an ohmic contact layer;

patterning the conductor layer, the ohmic contact layer and the semiconductor layer to form the data wire, a conductive bridge connecting the drain electrode to the source electrode, an ohmic contact bridge under the conductive bridge and the semiconductor pattern;

forming an insulating layer for the passivation layer;

coating a photoresist layer on the insulation layer;

exposing the photoresist layer to light through a mask;

developing the photoresist layer to form a photoresist pattern such that the third portion is located on the gate pad, the data pad, and the drain electrode, and the second portion is located on the conductive bridge;

removing the insulating layer and the gate insulating layer on the gate pad along with the first portion and the insulating layer thereunder to expose the gate pad and the conductive bridge along with forming the passivation layer pattern;

removing the photoresist pattern;

forming the pixel electrode, a redundant gate pad and a redundant data pad that respectively cover the drain electrode, the gate pad and the data pad on the passivation pattern; and

removing the conductive bridge and the ohmic contact bridge to obtain the completed data wire and the completed ohmic contact layer pattern.