Liquid crystal display device

• US 6,255,131 B1
• Filed: 10/29/1999
• Issued: 07/03/2001
• Est. Priority Date: 04/07/1998
• Status: Expired due to Term

• Current Assignee: Panasonic Liquid Crystal Display Company Limited (Panasonic Holdings Corporation)
• Original Assignee: Hitachi, Ltd.
• Inventors: Ishida, Kazuhiro, Mori, Ikuko, Kaitoh, Takuo, Abe, Hironobu, Eto, Masahiro, Satoh, Toshihiro, Kudoh, Hajime
• Primary Examiner(s): Niebling, John F.
• Assistant Examiner(s): WHITMORE, STACY
• Application Number:
  US09/430,133
• Time in Patent Office: 613 Days
• Field of Search: 438/30, 438/158, 438/149, 257/59
• US Class Current: 438/30
• CPC Class Codes: G02F 1/136209 Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
• CPC Class Codes: G02F 1/136213 Storage capacitors associated with the pixel electrode
• CPC Class Codes: G02F 2202/104 poly-Si
• CPC Class Codes: H01L 29/6675 Amorphous silicon or polysilicon transistors
• CPC Class Codes: H01L 29/78633 with a light shield
• CPC Class Codes: H01L 29/78648 arranged on opposing sides of the channel

Abstract

A method for forming a liquid crystal display device, which includes steps of forming a metal film over a substrate, patterning the metal film to form a first gate electrode and a first capacitor electrode as a part of a first capacity element, and forming a first insulating film over the metal film. The steps further include forming a first polycrystalline-silicon layer over the first insulating film, and patterning the first polycrystalline-silicon layer to form a second capacitor electrode as a part of the first capacity element and a second capacity element, while additionally including the steps forming a second insulating film over the polycrystalline-silicon layer, forming a second polycrystalline-silicon layer over the second insulating film, and patterning the second polycrystalline-silicon layer to form a second gate electrode and a third capacitor electrode as part of the second capacity element.

Claims

1. A method for forming a liquid crystal display device, comprising the steps of:

forming a metal film over a substrate;

patterning said metal film to form a first gate electrode and a first capacitor electrode as a part of a first capacity element;

forming a first insulating film over said metal film;

forming a first polycrystalline-silicon layer over said first insulating film;

patterning said first polycrystalline-silicon layer to form a second capacitor electrode as a part of said first capacity element and a second capacity element;

forming a second insulating film over said polycrystalline-silicon layer;

forming a second polycrystalline-silicon layer over said second insulating film; and

patterning said second polycrystalline-silicon layer to form a second gate electrode and a third capacitor electrode as part of said second capacity element.

2. The method according to claim 1, wherein a first scanning line which is electrically connected to said first gate electrode is patterned in the same step of patterning to form said first capacitor electrode.

3. The method according to claim 1, wherein said first gate electrode shades light into said polycrystalline silicon layer.

4. The method according to claim 1, wherein said metal film is a refractory metal silicide film.

5. A method for forming a liquid crystal display device, comprising the steps of:

forming a metal film over a substrate;

patterning said metal film to form a first gate electrode and a first capacitor electrode as part of a first capacity element;

forming a first insulating film over said metal film;

forming a first polycrystalline-silicon layer over said first insulating film;

patterning said first polycrystalline silicon layer to form a second capacitor electrode as part of said first capacity element and a second capacity element;

forming a second insulating film over said first polycrystalline-silicon layer;

forming a second polycrystalline silicon layer over said second insulating film;

opening a through hole on said first and second insulating films in a peripheral portion of a pixel portion;

patterning said second polycrystalline-silicon layer to form a second gate electrode and a third capacitor electrode as part of said second capacity element; and

connecting said second polycrystalline-silicon layer to said metal film through said through hole.

6. The method according to claim 5, wherein a first scanning line which is electrically connected to said first gate electrode is patterned in the same step of patterning to form said first capacitor electrode.

7. The method according to claim 5, wherein said first gate electrode shades light into said polycrystalline-silicon layer.

8. The method according to claim 5, wherein said metal film is a refractory metal silicide film.