Plasma treatment to enhance inorganic dielectric adhesion to copper
First Claim
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1. A method of facilitating the adhesion of an inorganic barrier film formed on an copper interconnect structure, said method comprising the steps of:
- (a) exposing an interconnect semiconductor structure containing at least a layer of copper to a reducing plasma; and
(b) forming an inorganic barrier film on said plasma exposed copper interconnect structure, wherein said exposing step improves the adhesion of said inorganic barrier film to a copper surface of said copper interconnect structure.
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Abstract
The present invention utilizes a reducing plasma treatment step to enhance the adhesion of a subsequently deposited inorganic barrier film to a copper wire or via present in a semiconductor interconnect structure such as a dual damascene structure.
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Citations
18 Claims
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1. A method of facilitating the adhesion of an inorganic barrier film formed on an copper interconnect structure, said method comprising the steps of:
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(a) exposing an interconnect semiconductor structure containing at least a layer of copper to a reducing plasma; and
(b) forming an inorganic barrier film on said plasma exposed copper interconnect structure, wherein said exposing step improves the adhesion of said inorganic barrier film to a copper surface of said copper interconnect structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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