×

Plasma treatment to enhance inorganic dielectric adhesion to copper

  • US 6,255,217 B1
  • Filed: 01/04/1999
  • Issued: 07/03/2001
  • Est. Priority Date: 01/04/1999
  • Status: Expired due to Term
First Claim
Patent Images

1. A method of facilitating the adhesion of an inorganic barrier film formed on an copper interconnect structure, said method comprising the steps of:

  • (a) exposing an interconnect semiconductor structure containing at least a layer of copper to a reducing plasma; and

    (b) forming an inorganic barrier film on said plasma exposed copper interconnect structure, wherein said exposing step improves the adhesion of said inorganic barrier film to a copper surface of said copper interconnect structure.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×