Temperature sensor

• US 6,255,892 B1
• Filed: 09/09/1999
• Issued: 07/03/2001
• Est. Priority Date: 09/09/1998
• Status: Expired due to Term

• Current Assignee: Infineon Technologies AG
• Original Assignee: Siemens AG
• Inventors: Gärtner, Manuel, Hertrich, Helmut
• Primary Examiner(s): ZWEIZIG, JEFFERY SHAWN
• Application Number:
  US09/392,271
• Time in Patent Office: 663 Days
• Field of Search: 27/77, 27/80, 27/81, 27/83, 27/87, 27/88, 27/89, 275/12, 275/13
• US Class Current: 327/512
• CPC Class Codes: G01K 7/01 using semiconducting elements having PN junctions G01K7/02, G01K7/16, G01K7/30 take precedence
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

The temperature sensor measures temperatures within a defined temperature measuring range. The sensor includes a reference voltage source with an output terminal to which a reference voltage is applied and which is connected to a first input terminal of a comparator. A series circuit of a semiconductor component with temperature-independent current characteristic and a reference component is connected between a first and a second supply voltage terminal. A temperature-dependent voltage is applied to a node common to the semiconductor component and the reference component. The temperature-dependent voltage is fed to a second input terminal of the comparator. The supply voltage is adjustable within a defined supply voltage range and, within a voltage range resulting from the supply voltage range of a voltage across the reference component, the reference component has a voltage-dependent current characteristic.

Claims

1. A temperature sensor for measuring temperatures within a defined temperature measuring range, comprising:

a reference voltage source with an output terminal receiving a reference voltage;

a comparing element with a first input terminal connected to said reference voltage source, and a second input terminal;

first and second supply terminals carrying a supply voltage adjustable within a defined supply voltage range;

a series circuit of a measuring element and a reference component connected between said first and second supply terminals, whereby a node common to said measuring element and said reference component receives a temperature-dependent voltage and is connected with said second input terminal of said comparing element; and

said reference component having a voltage-dependent current characteristic within a voltage range of a voltage across the reference component determined by the defined supply voltage range.

2. The temperature sensor according to claim 1, wherein said reference component is an ohmic resistor.

3. The temperature sensor according to claim 1, wherein said reference component is a thick oxide depletion-mode transistor.

4. The temperature sensor according to claim 1, wherein said measuring element is a diode.

5. The temperature sensor according to claim 1, wherein said measuring element is a MOS transistor wired up as a diode.

6. The temperature sensor according to claim 1, wherein said measuring element is a series circuit of at least two MOS transistors each wired up as a diode.

7. The temperature sensor according to claim 1, wherein a reference voltage at said output terminal of said reference voltage source is temperature-independent within the temperature measuring range and is independent of the supply voltage within the defined supply voltage range.

8. The temperature sensor according to claim 1, wherein said reference voltage source is connected between said first and second supply terminals and comprises a series circuit of a depletion-mode FET wired up as a current source and an enhancement-mode FET wired up as a diode, and wherein a node common to said depletion-mode FET and said enhancement-mode FET is connected to said output terminal.

9. The temperature sensor according to claim 8, wherein said depletion-mode FET and said enhancement-mode FET are tuned to each other such that a voltage arising across said enhancement-mode FET does not increase within the temperature measuring range.

10. The temperature sensor according to claim 1, wherein said comparing element is a differential amplifier.

11. The temperature sensor according to claim 1, wherein said comparing element is a comparator.