Test structure and methodology for characterizing etching in an integrated circuit fabrication process
First Claim
1. A test structure for characterizing local interconnect formation, comprising:
- a contrast layer residing above a substrate;
a simulated substrate including a first material residing laterally adjacent a second material, both of which reside upon the contrast layer; and
a pattern layer residing upon said simulated substrate, wherein the pattern layer includes openings extending therethrough to the lateral boundary between the first and second materials.
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Abstract
A test structure for characterizing etching procedures used in integrated circuit fabrication processes and a method for using the test structure are described. The test structure includes a contrast layer, a simulated substrate, and a pattern layer arranged in order upon a substrate. The simulated substrate includes portions mimicking a semiconductor substrate and portions mimicking isolation regions. Etching of the pattern layer may be performed according to a procedure used in the fabrication of integrated circuits. The contrast layer may be selectively etched relative to the substrate, the simulated substrate, and the pattern layer. Exposure of the etched test structure to a wet etchant selective for the contrast layer may be used to identify defects resulting from over-etching or other errors in the integrated circuit fabrication procedure being tested.
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Citations
14 Claims
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1. A test structure for characterizing local interconnect formation, comprising:
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a contrast layer residing above a substrate;
a simulated substrate including a first material residing laterally adjacent a second material, both of which reside upon the contrast layer; and
a pattern layer residing upon said simulated substrate, wherein the pattern layer includes openings extending therethrough to the lateral boundary between the first and second materials. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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Specification