Method of producing semiconductor thin film and method of producing solar cell using same

• US 6,258,666 B1
• Filed: 06/15/1999
• Issued: 07/10/2001
• Est. Priority Date: 06/18/1998
• Status: Expired due to Fees

• Current Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Original Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Inventors: Iwasaki, Yukiko, Mizutani, Masaki, Nakagawa, Katsumi, Tanikawa, Isao, Shoji, Tatsumi, Ukiyo, Noritaka
• Primary Examiner(s): Chaudhuri, Olik
• Assistant Examiner(s): Rao, Shrinivas H.
• Application Number:
  US09/333,019
• Time in Patent Office: 756 Days
• Field of Search: 438/458, 438/71, 438/455, 479/98, 136/255, 136/256, 136/261, 225/464, 225/975, 205/255, 205/256, 205/261, 117/43, 117/44, 117/45, 117/915
• US Class Current: 438/258
• CPC Class Codes: C23C 16/01 on temporary substrates, e.g. substrates subsequently removed by etching
• CPC Class Codes: C30B 29/60 characterised by shape
• CPC Class Codes: C30B 33/00 After-treatment of single crystals or homogeneous polycrystalline material with defined structure C30B31/00 takes precedence
• CPC Class Codes: H01L 21/76251 using bonding techniques
• CPC Class Codes: H01L 31/1892 methods involving the use of temporary, removable substrates
• CPC Class Codes: Y02E 10/50 Photovoltaic [PV] energy
• CPC Class Codes: Y10S 156/93 Semiconductive product delaminating, e.g. delaminating emiconductive wafer from underlayer
• CPC Class Codes: Y10S 156/942 with reorientation means
• CPC Class Codes: Y10T 156/1179 with poking during delaminating [e.g., jabbing, etc.]
• CPC Class Codes: Y10T 156/1978 Delaminating bending means

Abstract

Provided is a method of producing a semiconductor thin film wherein while a semiconductor thin film formed on a substrate is supported on a curved surface of a support member having the curved surface, the support member is rotated, thereby peeling the semiconductor thin film away from the substrate. Also provided is a method of producing a semiconductor thin film having the step of peeling a semiconductor thin film formed on a substrate away from the substrate, wherein the peeling step is carried out after the substrate is secured on a substrate support member without an adhesive. These provide the method of peeling the semiconductor thin film away from the substrate without damage and the method of holding the substrate without contamination.

Claims

1. A method of producing a semiconductor thin film, comprising the step of rotating a thin film support member having a curved surface while supporting a semiconductor thin film formed on a substrate, on the curved surface of the thin film support member, thereby peeling the semiconductor thin film away from the substrate.

2. The method according to claim 1, wherein the radius of curvature of the curved surface increases with progress of the peeling.

3. The method according to claim 1, wherein a film with flexibility is bonded to the semiconductor thin film and the thin film support member is rotated while the film is kept in contact with the curved surface of the thin film support member.

4. The method according to claim 3, wherein the film is an adhesive film comprising a film base and an adhesive.

5. The method according to claim 3, wherein the film is bonded while being pressed using the thin film support member.

6. The method according to claim 3, wherein an energy is applied to an adhesive for bonding the film to the semiconductor thin film to cure the adhesive.

7. The method according to claim 1, comprising the step of forming a separation layer for the semiconductor thin film before formation of the semiconductor thin film.

8. The method according to claim 1, wherein a peeling assist force is applied between the substrate and the semiconductor thin film.

9. The method according to claim 1, wherein the semiconductor thin film has a pn junction.

10. The method according to claim 1, wherein the thin film support member is rotated without a slip on a substrate support member for supporting the substrate.

11. A method of producing a semiconductor thin film, comprising the step of peeling a semiconductor thin film formed on a substrate away from the substrate, wherein the magnitude of an external force for peeling the semiconductor thin film decreases with progress of the peeling.

12. The method according to claim 11, comprising the step of forming a separation layer for the semiconductor thin film before formation of the semiconductor thin film.

13. The method according to claim 11, wherein a peeling assist force is applied between the substrate and the semiconductor thin film.

14. The method according to claim 11, wherein the semiconductor thin film has a pn junction.

15. A method of producing a semiconductor thin film, comprising the step of peeling a semiconductor thin film formed on a substrate away from the substrate, wherein the step of peeling is carried out after the substrate is secured on a substrate support member without an adhesive.

16. The method according to claim 15, wherein the substrate is secured by either one selected from vacuum suction, electrostatic suction, a securing claw, or a combination thereof.

17. The method according to claim 15, wherein the holding power of the substrate decreases with distance from a start point of the peeling.

18. The method according to claim 15, wherein an elastic member is interposed between the substrate and the substrate support member.

19. A method of producing a semiconductor thin film, comprising the step of peeling a semiconductor thin film formed on a substrate away from the substrate, wherein the peeling rate of the semiconductor thin film is decreased with progress of the peeling.

20. The method according to claim 19, comprising the step of forming a separation layer for the semiconductor thin film before formation of the semiconductor thin film.

21. The method according to claim 19, wherein a peeling assist force is applied between the substrate and the semiconductor thin film.

22. The method according to claim 19, wherein the semiconductor thin film has a pn junction.