Multiple thickness of gate oxide

• US 6,258,673 B1
• Filed: 12/22/1999
• Issued: 07/10/2001
• Est. Priority Date: 12/22/1999
• Status: Expired due to Fees

• Current Assignee: International Business Machines Corporation
• Original Assignee: International Business Machines Corporation
• Inventors: Houlihan, Kevin M., Han, Liang-Kai, Martin, Dale W.
• Primary Examiner(s): Smith, Matthew
• Assistant Examiner(s): Lytle, Craig P.
• Application Number:
  US09/470,460
• Time in Patent Office: 566 Days
• Field of Search: 438/199, 438/216, 438/238, 438/275, 438/287, 438/769, 438/770, 438/775, 438/981, 438/FOR.216, 438/FOR.489, 438/FOR.490
• US Class Current: 438/275
• CPC Class Codes: H01L 21/823462 with a particular manufacturing method of the gate insulating layers, e.g. different gate insulating layer thicknesses, particular gate insulator materials or particular gate insulator implants
• CPC Class Codes: Y10S 438/981 Utilizing varying dielectric thickness

Abstract

A method of forming an integrated circuit having four thicknesses of gate oxide in four sets of active areas by: oxidizing the silicon substrate to form an initial oxide having a thickness appropriate for a desired threshold voltage transistor; depositing a blocking mask to leave a first and fourth set of active areas exposed; implanting the first and fourth set of active areas with a dose of growth-altering ions, thereby making the first set of active areas more or less resistant to oxidation and simultaneously making the fourth set of active areas susceptible to accelerated oxidation; stripping the blocking mask; forming a second blocking mask to leave the first and second sets of active areas exposed; stripping the initial oxide in exposed active areas; stripping the second blocking mask; surface cleaning the wafer; and oxidizing the substrate in a second oxidation step such that a standard oxide thickness is formed in the second set of active areas, whereby an oxide thickness of more or less than the standard oxide thickness is formed in the first set of active areas, an oxide thickness of greater than the standard oxide thickness is formed in the third set of active areas, and a fourth oxide thickness greater than the third oxide thickness is formed in the fourth set of active areas.

Claims

1. A method of forming an integrated circuit having a first, second and third set of active areas comprising the steps of:

preparing a silicon substrate;

oxidizing said silicon substrate to form a first oxide having a first thickness;

depositing a first blocking mask to leave said first set of active areas exposed;

implanting said first set of active areas with a dose of growth-altering ions, whereby the thermal oxide growth rate in said first set of active areas is altered;

stripping said first blocking mask;

forming a second blocking mask to leave said first set of active areas and said second set of active areas exposed;

stripping said first oxide in said first and second set of active areas;

stripping said second blocking mask;

oxidizing said substrate in a second oxidation step such that a standard oxide thickness is formed in said second set of active areas, whereby a first oxide thickness different from said standard oxide thickness is formed in said first set of active areas, and a third oxide thickness of greater than said standard oxide thickness is formed in said third set of active areas.

2. A method according to claim 1, in which said growth altering ions are growth retarding ions and said different oxide thickness different from said standard oxide thickness is less than said standard oxide thickness.

3. A method according to claim 1, in which said standard oxide thickness is in the range from about 1 nm to about 10 nm.

4. A method according to claim 1, in which said first oxide thickness is in the range from about 2 nm to about 20 nm.

5. A method according to claim 1, in which said ion implant dose is in the range from about 1×

10¹³/cm² to about 1×

10¹⁶/cm² at a voltage from about 2 keV to about 200 keV.

6. A method according to claim 2, in which said first oxide thickness is in the range from about 2 nm to about 20 nm.

7. A method according to claim 2, in which said ion implant dose is in the range from about 1×

10¹³/cm² to about 1×

10¹⁶/cm² at a voltage from about 2 keV to about 200 keV.

8. A method according to claim 3, in which said ion implant dose is in the range from about 1×

10¹³/cm² to about 1×

10¹⁶/cm² at a voltage from about 2 keV to about 200 keV.

9. A method according to claim 1, in which said growth altering ions are growth promoting ions and said different oxide thickness different from said standard oxide thickness is greater than said standard oxide thickness.

10. A method according to claim 1, further including a step of implanting a dose of growth-promoting ions in at least one of said set of active areas.

11. A method according to claim 10, in which said step of implanting a dose of growth-promoting ions is performed after said step of forming said second blocking mask.

12. A method according to claim 10, in which said step of implanting a dose of growth-promoting ions is a blanket implant.

13. A method according to claim 1, in which said step of implanting said first set of active areas includes implanting both growth promoting ions and growth retarding ions.

14. A method according to claim 13, in which said step of implanting said first set of active areas includes implanting both nitrogen and oxygen.

15. A method according to claim 14, in which said step of implanting said first set of active areas includes implanting both nitrogen and oxygen in a ration to produce oxy-nitride.

16. A method of forming an integrated circuit having first, second, third and fourth sets of active areas comprising the steps of:

preparing a silicon substrate;

oxidizing said silicon substrate to form a first oxide having a first thickness;

depositing a first blocking mask to leave said first and said fourth sets of active areas exposed;

implanting said first and fourth sets of active areas with a dose of growth-altering ions, whereby said first and fourth sets of active areas have altered oxide growth rates;

stripping said first blocking mask;

forming a second blocking mask to leave said first set of active areas and said second set of active areas exposed;

stripping said first oxide in said first and second set of active areas;

stripping said second blocking mask;

oxidizing said substrate in a second oxidation step such that a standard oxide thickness is formed in said second set of active areas, whereby a different oxide thickness different from said standard oxide thickness is formed in said first set of active areas, an oxide thickness of greater than said standard oxide thickness is formed in said third set of active areas and an oxide thickness of greater than said third oxide thickness is formed in said fourth set of active areas.

17. A method according to claim 16, in which said growth altering ions are growth retarding ions and said different oxide thickness different from said standard oxide thickness is less than said standard oxide thickness.

18. A method according to claim 17, in which said standard oxide thickness is in the range from about 1 nm to about 10 nm.

19. A method according to claim 17, in which said first oxide thickness is in the range from about 0 nm to about 20 nm.

20. A method according to claim 17, in which said ion implant dose is in the range from about 1×

10¹³/cm² to about 1×

10¹⁶/cm² at a voltage from about 2 kev to about 200 kev.

21. A method according to claim 18, in which said first oxide thickness is in the range from about 0 nm to about 20 nm.

22. A method according to claim 18, in which said ion implant dose is in the range from about 1×

10¹³/cm² to about 1×

10¹⁶/cm² at a voltage from about 2 kev to about 200 kev.

23. A method according to claim 19, in which said ion implant dose is in the range from about 1×

10¹³/cm² to about 1×

10¹⁶/cm² at a voltage from about 2 kev to about 200 kev.

24. A method according to claim 16, in which said growth altering ions are growth promoting ions and said different oxide thickness different from said standard oxide thickness is greater than said standard oxide thickness.

25. A method according to claim 16, further including a step of implanting a dose of growth-promoting ions in at least one of said set of active areas.

26. A method according to claim 25, in which said step of implanting a dose of growth-promoting ions is performed after said step of forming said second blocking mask.

27. A method according to claim 26, in which said step of implanting a dose of growth-promoting ions is a blanket implant.

28. A method according to claim 16, in which said step of implanting said first set of active areas includes implanting both growth promoting ions and growth retarding ions.

29. A method according to claim 28, in which said step of implanting said first set of active areas includes implanting both nitrogen and oxygen.

30. A method according to claim 29, in which said step of implanting said first set of active areas includes implanting both nitrogen and oxygen in a ration to produce oxy-nitride.