Light emitting diode with a permanent subtrate of transparent glass or quartz and the method for manufacturing the same
First Claim
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1. A method for manufacturing a light emitting diode, comprising the steps of:
- selecting a temporary substrate, growing an LED light emitting region on said temporary substrate and forming an LED element;
selecting a permanent substrate and plating a first side of said permanent substrate with a metal bonding agent;
adhering said light emitting region of said LED element to said permanent substrate by means of said metal bonding agent to form a dual substrate LED element;
placing said dual substrate LED element on top of a graphite shim in a graphite lower chamber of a wafer holding device;
placing a graphite pillar above said dual substrate LED element;
covering said wafer holding device with a graphite upper cover, said graphite upper cover having a stainless steel screw pressing said graphite pillar, and said stainless steel screw having a thermal expansion coefficient larger than the thermal expansion coefficient of graphite;
heating said dual substrate LED element in said wafer holding device, said dual substrate LED element being applied with a force because of thermal expansion of said stainless steel screw;
taking said dual substrate LED element out of said wafer holding device;
removing said temporary substrate from said dual substrate LED element to form a plane LED element;
patterning said light emitting region of said plane LED element; and
forming two ohmic contact electrodes for said plane LED element.
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Abstract
A method of manufacturing a light emitting diode (LED) includes growing a light emitting region on a temporary substrate, bonding a transparent substrate of glass or quartz to the light emitting region and then removing the temporary substrate. A metal bonding agent also serving as an ohmic contact layer with LED is used to bond the transparent substrate to form a dual substrate LED element which is then heated in a wafer holding device that includes a graphite lower chamber and a graphite upper cover with a stainless steel screw. Because of the different thermal expansion coefficients between stainless and graphite, the stainless steel screw applies a pressure to the dual substrate LED element during the heating process to assist the bonding of the transparent substrate.
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Citations
10 Claims
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1. A method for manufacturing a light emitting diode, comprising the steps of:
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selecting a temporary substrate, growing an LED light emitting region on said temporary substrate and forming an LED element; selecting a permanent substrate and plating a first side of said permanent substrate with a metal bonding agent; adhering said light emitting region of said LED element to said permanent substrate by means of said metal bonding agent to form a dual substrate LED element; placing said dual substrate LED element on top of a graphite shim in a graphite lower chamber of a wafer holding device; placing a graphite pillar above said dual substrate LED element; covering said wafer holding device with a graphite upper cover, said graphite upper cover having a stainless steel screw pressing said graphite pillar, and said stainless steel screw having a thermal expansion coefficient larger than the thermal expansion coefficient of graphite; heating said dual substrate LED element in said wafer holding device, said dual substrate LED element being applied with a force because of thermal expansion of said stainless steel screw; taking said dual substrate LED element out of said wafer holding device; removing said temporary substrate from said dual substrate LED element to form a plane LED element; patterning said light emitting region of said plane LED element; and forming two ohmic contact electrodes for said plane LED element. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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Current AssigneeEpistar Corporation (Ennostar, Inc.)
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Original AssigneeVisual Photonics Epitaxy Company Limited
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InventorsChen, Lung-Chien, Wei, Sun-Chin, Wuu, Dong-Sing, Horng, Ray-Hua, Lin, Kun-Chuan, Huang, Man-Fang, Chang, Kuo-Hsiung
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Primary Examiner(s)Lee, Eddie C.
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Assistant Examiner(s)RICHARDS, NORMAN DREW
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Application NumberUS09/307,681Time in Patent Office792 DaysField of Search438/22, 438/29, 438/26, 438/33, 438/46, 438/125, 438/455, 438/458, 414/935, 206/710, 206/832US Class Current438/458CPC Class CodesH01L 33/0093 Wafer bonding; Removal of t...Y10S 414/135 Associated with semiconduct...
