Method for forming metal line of semiconductor device by (TiA1)N anti-reflective coating layer
First Claim
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1. A method for forming a metal line of an integrated semiconductor device, comprising the steps of:
- forming a metal layer on a semiconductor device;
forming an anti-reflective coating layer composed of (TiAl)N on the metal layer wherein the (TiAl)N layer is formed by a plasma enhanced chemical vapor deposition using TiCl4, AlCl3, and N2 and the (TiAl)N layer is formed by applying a power of 10-1000 watts at a temperature of 300-450°
C.;
forming a photosensitive layer pattern on the (TiAl)N anti-reflective coating layer;
selectively etching the (TiAl)N anti-reflective coating layer and the metal layer, so as to form the metal line; and
removing the photosensitive layer pattern.
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Abstract
There is provided a method for forming a metal line of a semiconductor device, in which a (TiAl)N layer having a lower reflectivity and permeability is formed as anti-reflective coating layer. Since the (TiAl)N anti-reflective coating layer effectively prevent a metal line from reflecting in lightening process using a shorter wavelength such as DUV, a fine metal line can be formed exactly.
64 Citations
1 Claim
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1. A method for forming a metal line of an integrated semiconductor device, comprising the steps of:
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forming a metal layer on a semiconductor device;
forming an anti-reflective coating layer composed of (TiAl)N on the metal layer wherein the (TiAl)N layer is formed by a plasma enhanced chemical vapor deposition using TiCl4, AlCl3, and N2 and the (TiAl)N layer is formed by applying a power of 10-1000 watts at a temperature of 300-450°
C.;
forming a photosensitive layer pattern on the (TiAl)N anti-reflective coating layer;
selectively etching the (TiAl)N anti-reflective coating layer and the metal layer, so as to form the metal line; and
removing the photosensitive layer pattern.
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Current AssigneeHyundai Electronics Industries Co. Ltd. (SK Hynix Inc.)
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Original AssigneeYundai Electronics Industries Company Limited
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InventorsKim, Young Jung, Lee, Sang Hyeob
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Primary Examiner(s)Utech, Benjamin L.
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Assistant Examiner(s)Tran, Binh X.
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Application NumberUS09/343,291Time in Patent Office741 DaysField of Search438/712, 438/717, 438/720, 438/725, 438/733, 438/742, 438/785, 257/750, 257/758US Class Current438/712CPC Class CodesH01L 21/0276 using an anti-reflective co...H01L 21/32139 using masksH01L 21/76838 characterised by the format...
