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Method for using bypass lines to stabilize gas flow and maintain plasma inside a deposition chamber

  • US 6,258,735 B1
  • Filed: 10/05/2000
  • Issued: 07/10/2001
  • Est. Priority Date: 10/05/2000
  • Status: Expired due to Term
First Claim
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1. A method for depositing a film on a substrate, comprising:

  • positioning a substrate in a chamber;

    flowing oxygen into the chamber;

    generating an oxygen plasma;

    establishing a flow of a carbon silicon gas source through a bypass;

    delivering the carbon silicon gas source to the chamber; and

    depositing a film on the substrate.

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