Process for fabrication of an all-epitaxial-oxide transistor

• US 6,259,114 B1
• Filed: 05/07/1999
• Issued: 07/10/2001
• Est. Priority Date: 05/07/1999
• Status: Expired due to Fees

• Current Assignee: International Business Machines SA (International Business Machines Corporation)
• Original Assignee: International Business Machines Corporation
• Inventors: Schrott, Alejandro G., Misewich, James A.
• Primary Examiner(s): CRANE, SARA W
• Application Number:
  US09/306,635
• Time in Patent Office: 795 Days
• Field of Search: 257/43, 257/192, 257/289, 257/295, 257/410
• US Class Current: 257/43
• CPC Class Codes: H10N 99/03 Devices using Mott metal-insulator transition, e.g. field effect transistors

Abstract

A method and structure of forming an integrated circuit chip having a transistor includes forming a conductive oxide layer, forming a Mott transition oxide layer over the conductive oxide layer and forming an insulative oxide layer over the Mott transition oxide layer.

Claims

1. An integrated circuit chip having a transistor comprising:

a conductive oxide layer;

a Mott transition oxide layer over said conductive oxide layer; and

an insulative oxide layer over said Mott transition oxide layer.

2. The integrated circuit chip in claim 1, further comprising source and drain contacts connected to said conductive oxide layer and a gate conductor over said insulative oxide layer.

3. The integrated circuit chip in claim 2, wherein said Mott transition oxide layer includes a channel region adjacent said gate conductor.

4. The integrated circuit chip in claim 2, further comprising a gate conductor contact connected to a same wiring level as said source and drain contacts.

5. The integrated circuit chip in claim 1, further comprising a release layer below said conductive oxide layer and a substrate below said release layer.

6. The integrated circuit chip in claim 1, further comprising a flexible substrate over said insulative oxide layer.

7. The integrated circuit chip in claim 1, wherein said Mott transition layer comprises a perovskite oxide.

8. The integrated circuit chip in claim 1, wherein said conductive oxide layer, said Mott transition oxide layer and said insulative oxide layer comprise epitaxially grown layers.