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Equipotential sense methods for resistive cross point memory cell arrays

  • US 6,259,644 B1
  • Filed: 05/03/2000
  • Issued: 07/10/2001
  • Est. Priority Date: 11/20/1997
  • Status: Expired due to Term
First Claim
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1. A method of performing a read operation on a selected memory cell in a resistive cross point array of memory cells, a plurality of word lines crossing rows of the memory cells, a plurality of bit lines crossing columns of the memory cells, the method comprising the steps of:

  • applying a first potential to a selected bit line crossing the selected memory cell and a second potential to a selected word line crossing the selected memory cell;

    applying a third potential to a subset of unselected word and bit lines, the third potential being equal to the first potential; and

    determining the resistance state of the selected memory cell while the potentials are being applied to the selected lines and subset of unselected lines.

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