System for real-time control of semiconductor wafer polishing

• US 6,261,151 B1
• Filed: 02/11/2000
• Issued: 07/17/2001
• Est. Priority Date: 08/25/1993
• Status: Expired due to Term

• Current Assignee: Round Rock Research LLC
• Original Assignee: Micron Technology, Inc.
• Inventors: Sandhu, Gurtej S., Doan, Trung Tri
• Primary Examiner(s): Eley, Timothy V.
• Application Number:
  US09/501,735
• Time in Patent Office: 522 Days
• Field of Search: 437/7, 437/8, 437/225, 437/249, 451/5, 451/6, 451/7, 451/8, 451/9, 451/10, 451/41, 451/285, 451/286, 451/287, 451/288, 451/289, 451/290, 451/398
• US Class Current: 451/5
• CPC Class Codes: B23Q 15/013 Control or regulation of feed movement B23Q15/12 takes precedence
• CPC Class Codes: B23Q 15/12 Adaptive control, i.e. adjusting itself to have a performance which is optimum according to a preassigned criterion
• CPC Class Codes: B24B 13/015 of television picture tube viewing panels, headlight reflectors or the like
• CPC Class Codes: B24B 37/013 Devices or means for detecting lapping completion
• CPC Class Codes: B24B 37/015 Temperature control
• CPC Class Codes: B24B 37/107 in a rotary movement only, about an axis being stationary during lapping
• CPC Class Codes: B24B 37/12 Lapping plates for working plane surfaces
• CPC Class Codes: B24B 37/205 provided with a window for inspecting the surface of the work being lapped
• CPC Class Codes: B24B 49/003 involving acoustic means
• CPC Class Codes: B24B 49/02 according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent B24B49/12 takes precedence
• CPC Class Codes: B24B 49/04 involving measurement of the workpiece at the place of grinding during grinding operation
• CPC Class Codes: B24B 49/10 involving electrical means B24B49/02, B24B49/08 take precedence
• CPC Class Codes: B24B 49/12 involving optical means
• CPC Class Codes: B24B 57/02 for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
• CPC Class Codes: G05B 19/404 characterised by control arrangements for compensation, e.g. for backlash, overshoot, tool offset, tool wear, temperature, machine construction errors, load, inertia G05B19/19, G05B19/41 take precedence
• CPC Class Codes: G05B 2219/34403 RTI real time, kernel, processing
• CPC Class Codes: G05B 2219/37398 Thickness
• CPC Class Codes: G05B 2219/37602 Material removal rate
• CPC Class Codes: G05B 2219/45026 Circuit board, pcb
• CPC Class Codes: G05B 2219/45199 Polish
• CPC Class Codes: G05B 2219/45232 : CMP chemical mechanical polishing of wafer
• CPC Class Codes: G05B 2219/49052 : Accessory, coolant
• CPC Class Codes: G05B 2219/49057 : Controlling temperature of workpiece, tool, probe holder

Abstract

A system for polishing a semiconductor wafer, the system comprising a wafer polishing assembly for polishing a face of a semiconductor wafer at a polishing rate and a polishing uniformity, the wafer polishing assembly including a platen subassembly defining a polishing area, and a polishing head selectively supporting a semiconductor wafer and holding a face of the semiconductor wafer in contact with the platen subassembly to polish the wafer face; and a controller selectively adjusting one of a plurality of adjustable polishing parameters during polishing of the wafer.

Claims

1. A system for polishing a semiconductor wafer comprising:

a wafer polishing assembly for polishing a face of a semiconductor wafer at a polishing rate and a polishing uniformity, the wafer polishing assembly including a platen rotatable about a first axis, a polishing head configured to support the semiconductor wafer for rotation about a second axis, and a polishing head displacement mechanism configured to move the polishing head and wafer across the platen, the wafer polishing assembly having a plurality of controllable operational parameters that affect the polishing rate and polishing uniformity;

a controller operably coupled to the wafer polishing assembly for monitoring and managing at least one of the operational parameters of the wafer polishing assembly;

a processor operably coupled to the controller for determining a set of desired operational parameters based on the monitored operational parameters and outputting control information indicative of the desired operational parameters to the controller, the controller being configured to adjust in situ at least one of the operational parameters of the wafer polishing assembly in response to the control information from the processor to effectuate a new polishing rate and a new polishing uniformity as the wafer polishing assembly continues to polish the face of the semiconductor wafer;

a plurality of pressure applicators supported by the polishing head and configured to act on the wafer, the pressure applicators being individually controllable to move between retracted positions and extended positions to alter the contour of the wafer; and

a detector coupled to the processor and configured to determine whether polishing of the wafer is complete, the detector including a current meter electrically coupled to the motor and in communication with the processor, the processor being configured to detect a change in friction between the wafer and the polishing head in response to a change in current through the motor.

2. A system for polishing a semiconductor wafer, the system comprising:

a wafer polishing assembly for polishing a face of a semiconductor wafer at a polishing rate and a polishing uniformity, the wafer polishing assembly including a platen subassembly defining a polishing area, and a polishing head configured to support a semiconductor wafer relative to the platen subassembly under an adjustable polishing force;

a motor drivingly connected to the platen subassembly and operative to cause rotation of the platen subassembly about an axis;

a controller configured to adjust the polishing force during polishing of the wafer; and

a plurality of pressure applicators supported by the polishing head and disposed to alter the contour of the wafer, the pressure applicators being individually controllable to move between retracted positions and extended positions to alter the contour of the wafer; and

a current meter electrically coupled to the motor.

3. A system for polishing a semiconductor wafer comprising:

a wafer polishing assembly for polishing a face of a semiconductor wafer at a polishing rate and a polishing uniformity, the wafer polishing assembly including a platen rotatable about a first axis, a polishing head configured to support the semiconductor wafer for rotation about a second axis, and a polishing head displacement mechanism configured to move the polishing head and wafer across the platen, the wafer polishing assembly having a plurality of controllable operational parameters;

a controller operably coupled to the wafer polishing assembly for monitoring and managing at least one of the operational parameters of the wafer polishing assembly;

a processor operably coupled to the controller for determining a set of desired operational parameters based on the monitored operational parameters and outputting control information indicative of the desired operational parameters to the controller, the controller being configured to adjust at least one of the operational parameters of the wafer polishing assembly in response to the control information from the processor to effectuate a new polishing rate and a new polishing uniformity as the wafer polishing assembly continues to polish the face of the semiconductor wafer;

a plurality of pressure applicators supported by the polishing head and configured to act on the wafer, the pressure applicators being controllable to move between retracted positions and extended positions to alter the contour of the wafer; and

an acoustic wave transducer configured to direct acoustic waves at the wafer, and an acoustic wave receiver mounted to receive acoustic waves reflected from the wafer.

4. A system for polishing a semiconductor wafer comprising:

a wafer polishing assembly for polishing a face of a semiconductor wafer at a polishing rate and a polishing uniformity, the wafer polishing assembly including a platen rotatable about a first axis, a polishing head configured to support the semiconductor wafer for rotation about a second axis, and a polishing head displacement mechanism configured to move the polishing head and wafer across the platen, the wafer polishing assembly having a plurality of controllable operational parameters;

a controller operably coupled to the wafer polishing assembly to control at least one of the operational parameters of the wafer polishing assembly;

a processor operably coupled to the controller for determining a set of desired operational parameters based on the monitored operational parameters and outputting control information indicative of the desired operational parameters to the controller, the controller being configured to adjust at least one of the operational parameters of the wafer polishing assembly in response to the control information from the processor to effectuate a new polishing rate and a new polishing uniformity as the wafer polishing assembly continues to polish the face of the semiconductor wafer;

a plurality of pressure applicators supported by the polishing head and configured to act on the wafer, the pressure applicators being individually controllable to move between retracted positions and extended positions to alter the contour of the wafer; and

a detector coupled to the processor and configured to determine whether polishing of the wafer is complete, the detector including an infrared camera directed at the wafer.

5. A polishing system comprising:

a wafer polishing assembly for polishing a face of a semiconductor wafer at a polishing rate and a polishing uniformity, the wafer polishing assembly including a platen rotatable about a first axis, a polishing head configured to support the semiconductor wafer for rotation about a second axis, and a polishing head displacement mechanism configured to move the polishing head and wafer across the platen, the wafer polishing assembly having a plurality of controllable operational parameters that affect the polishing rate and polishing uniformity;

a controller operably coupled to the wafer polishing assembly for monitoring and managing at least one of the operational parameters of the wafer polishing assembly;

a processor operably coupled to the controller for determining a set of desired operational parameters based on the monitored operational parameters and outputting control information indicative of the desired operational parameters to the controller, the controller being configured to adjust at least one of the operational parameters of the wafer polishing assembly in response to the control information from the processor to effectuate a new polishing rate and a new polishing uniformity of a polishing process;

a plurality of pressure applicators supported by the polishing head and configured to act on the wafer, the pressure applicators being individually controllable to move between retracted positions and extended positions to alter the contour of the wafer; and

a detector coupled to the processor and configured to determine whether polishing of the wafer is complete, the detector including a current meter electrically coupled to the motor and in communication with the processor, the processor being configured to detect a change in friction between the wafer and the polishing head in response to a change in current through the motor.

6. A polishing system controlling at least one operational parameter of a polishing process to control wafer to wafer uniformity of the process, the system comprising:

a wafer polishing assembly for polishing a face of a semiconductor wafer at a polishing rate and a polishing uniformity, the wafer polishing assembly including a platen rotatable about a first axis, a polishing head configured to support the semiconductor wafer for rotation about a second axis, and a polishing head displacement mechanism configured to move the polishing head and wafer across the platen, the wafer polishing assembly having a plurality of controllable operational parameters that affect the polishing rate and polishing uniformity;

a controller operably coupled to the wafer polishing assembly for monitoring and managing at least one of the operational parameters of the wafer polishing assembly to maintain wafer to wafer uniformity of the polishing process;

a processor operably coupled to the controller for determining a set of desired operational parameters based on the monitored operational parameters and outputting control information indicative of the desired operational parameters to the controller, the controller adjusting at least one of the operational parameters of the wafer polishing assembly in response to the control information from the processor to effectuate a new polishing rate and a new polishing uniformity of a polishing process;

a plurality of pressure applicators supported by the polishing head and configured to act on the wafer supported by the polishing head, the pressure applicators being individually controllable to move between retracted positions and extended positions to alter the contour of the wafer; and

a detector coupled to the processor and configured to determine whether polishing of the wafer is complete, the detector including a current meter electrically coupled to the motor and in communication with the processor, the processor being configured to detect a change in friction between the wafer and the polishing head in response to a change in current through the motor.

7. A polishing system comprising:

a wafer polishing assembly for polishing a face of a semiconductor wafer at a polishing rate and a polishing uniformity, the wafer polishing assembly including a platen subassembly defining a polishing area, and a polishing head configured to support the semiconductor wafer relative to the platen subassembly under an adjustable polishing force;

a motor drivingly connected to the platen subassembly and operative to cause rotation of the platen subassembly about an axis;

a controller configured to adjust the polishing force; and

a plurality of pressure applicators supported by the polishing head and disposed to alter the contour of the wafer, the pressure applicators being individually controllable to move between retracted positions and extended positions to alter the contour of the wafer; and

a current meter electrically coupled to the motor.

8. A polishing system controlling at least one operational parameter of a polishing process to control wafer to wafer uniformity of the process, the system comprising:

a wafer polishing assembly for polishing a face of a semiconductor wafer at a polishing rate and a polishing uniformity, the wafer polishing assembly including a platen subassembly defining a polishing area, and a polishing head configured to support the semiconductor wafer relative to the platen subassembly under an adjustable polishing force, the polishing force being an operational parameter;

a motor drivingly connected to the platen subassembly and operative to cause rotation of the platen subassembly about an axis;

a controller configured to adjust the polishing force and thereby control at least one operational parameter, the controller being configured to control wafer to wafer uniformity by controlling the at least one operational parameter; and

a plurality of pressure applicators supported by the polishing head and disposed to alter the contour of the wafer, the pressure applicators being individually controllable to move between retracted positions and extended positions to alter the contour of the wafer; and

a current meter electrically connected to the motor.

9. The polishing system of claim 8 wherein the at least one operational parameter includes polishing force.

10. A polishing system comprising:

a wafer polishing assembly for polishing a face of a semiconductor wafer at a polishing rate and a polishing uniformity, the wafer polishing assembly including a platen rotatable about a first axis, a polishing head configured to support the semiconductor wafer for rotation about a second axis, and a polishing head displacement mechanism configured to move the polishing head and wafer across the platen, the wafer polishing assembly having a plurality of controllable operational parameters;

a controller operably coupled to the wafer polishing assembly for monitoring and managing at least one of the operational parameters of the wafer polishing assembly;

a processor operably coupled to the controller for determining a set of desired operational parameters based on the monitored operational parameters and outputting control information indicative of the desired operational parameters to the controller;

a plurality of pressure applicators supported by the polishing head and configured to act on the wafer, the pressure applicators being controllable to move between retracted positions and extended positions to alter the contour of the wafer; and

an acoustic wave transducer configured to direct acoustic waves at the wafer, and an acoustic wave receiver mounted to receive acoustic waves reflected from the wafer.

11. A polishing system controlling at least one operational parameter of a polishing process to control wafer to wafer uniformity of the process, the system comprising:

a wafer polishing assembly for polishing a face of a semiconductor wafer at a polishing rate and a polishing uniformity, the wafer polishing assembly including a platen rotatable about a first axis, a polishing head configured to support the semiconductor wafer for rotation about a second axis, and a polishing head displacement mechanism configured to move the polishing head and wafer across the platen, the wafer polishing assembly having a plurality of controllable operational parameters;

a controller operably coupled to the wafer polishing assembly for monitoring and managing at least one of the operational parameters of the wafer polishing assembly and thereby controlling wafer to wafer uniformity of a polishing process;

a processor operably coupled to the controller for determining a set of desired operational parameters based on the monitored operational parameters and outputting control information indicative of the desired operational parameters to the controller;

a plurality of pressure applicators supported by the polishing head and configured to act on the wafer, the pressure applicators being controllable to move between retracted positions and extended positions to alter the contour of the wafer; and

an acoustic wave transducer configured to direct acoustic waves at the wafer, and an acoustic wave receiver mounted to receive acoustic waves reflected from the wafer.

12. A polishing system comprising:

a wafer polishing assembly for polishing a face of a semiconductor wafer at a polishing rate and a polishing uniformity, the wafer polishing assembly including a platen rotatable about a first axis, a polishing head configured to support the semiconductor wafer for rotation about a second axis, and a polishing head displacement mechanism configured to move the polishing head and wafer across the platen, the wafer polishing assembly having a plurality of controllable operational parameters;

a controller operably coupled to the wafer polishing assembly to control at least one of the operational parameters of the wafer polishing assembly;

a processor operably coupled to the controller for determining a set of desired operational parameters based on the monitored operational parameters and outputting control information indicative of the desired operational parameters to the controller;

a plurality of pressure applicators supported by the polishing head and configured to act on the wafer, the pressure applicators being individually controllable to move between retracted positions and extended positions to alter the contour of the wafer; and

a detector coupled to the processor and configured to determine whether polishing of the wafer is complete, the detector including an infrared camera directed at the wafer.

13. A polishing system controlling at least one operational parameter of a polishing process to control wafer to wafer uniformity of the process, the system comprising:

a wafer polishing assembly for polishing a face of a semiconductor wafer at a polishing rate and a polishing uniformity, the wafer polishing assembly including a platen rotatable about a first axis, a polishing head configured to support the semiconductor wafer for rotation about a second axis, and a polishing head displacement mechanism configured to move the polishing head and wafer across the platen, the wafer polishing assembly having a plurality of controllable operational parameters;

a controller operably coupled to the wafer polishing assembly to control at least one of the operational parameters of the wafer polishing assembly and to thereby control wafer to wafer uniformity of a polishing process;

a processor operably coupled to the controller for determining a set of desired operational parameters based on the monitored operational parameters and outputting control information indicative of the desired operational parameters to the controller;

a plurality of pressure applicators supported by the polishing head and configured to act on the wafer, the pressure applicators being individually controllable to move between retracted positions and extended positions to alter the contour of the wafer; and

a detector coupled to the processor and configured to determine whether polishing of the wafer is complete, the detector including an infrared camera directed at the wafer.