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High-K MOM capacitor

  • US 6,261,917 B1
  • Filed: 05/09/2000
  • Issued: 07/17/2001
  • Est. Priority Date: 05/09/2000
  • Status: Expired due to Term
First Claim
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1. A method for fabricating a metal-oxide-metal capacitor comprising:

  • providing a first insulating layer overlying a semiconductor substrate;

    depositing a first metal layer over said insulating layer;

    depositing a second metal layer overlying said first metal layer;

    exposing said second metal layer to an oxidizing plasma while simultaneously exposing a portion of said second metal layer where said metal-oxide-metal capacitor is to be formed to light whereby said portion of said second metal layer exposed to said light reacts with said oxidizing plasma to form a metal oxide;

    thereafter removing said second metal layer leaving said metal oxide layer where said metal-oxide-metal capacitor is to be formed;

    depositing a third metal layer overlying said first metal layer and said metal oxide layer; and

    patterning said third metal layer, said metal oxide layer, and said first metal layer to form said metal-oxide-metal capacitor wherein said third metal layer forms an upper plate electrode, said metal oxide layer forms a capacitor dielectric, and said first metal layer forms a bottom plate electrode of said capacitor completing said fabrication of said metal-oxide-metal capacitor.

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