Methods of forming a plurality of semiconductor layers using spaced trench arrays
First Claim
1. A method of forming a semiconductor substrate, comprising the steps of:
- forming a plurality of selective growth regions at spaced locations on a first substrate, by forming a first selective growth region as a first plurality of trenches in the first substrate and forming a second selective growth region as a second plurality of trenches in the first substrate;
forming a plurality of semiconductor layers at spaced locations on the first substrate by epitaxially growing a first continuous semiconductor layer from sidewalls of the first plurality of trenches and epitaxially growing a second continuous semiconductor layer from sidewalls of the second plurality of trenches; and
dividing the first substrate into a plurality of second smaller substrates that contain only a respective one of the plurality of semiconductor layers, by partitioning the first substrate along a dicing trench that extends between the selective growth regions and is Wider than a width of each trench in the first plurality of trenches and a width of each trench in the second plurality of trenches.
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Abstract
Methods of forming compound semiconductor layers include the steps of forming a plurality of selective growth regions at spaced locations on a first substrate and then forming a plurality of semiconductor layers at spaced locations on the first substrate by growing a respective semiconductor layer on each of the selective growth regions. The first substrate is then divided into a plurality of second smaller substrates that contain only a respective one of the plurality of semiconductor layers. This dividing step is preferably performed by partitioning (e.g., dicing) the first substrate at the spaces between the selective growth regions. The step of forming a plurality of semiconductor layers preferably comprises growing a respective compound semiconductor layer (e.g., gallium nitride layer) on each of the selective growth regions. The growing step may comprise pendeoepitaxially growing a respective gallium nitride layer on each of the selective growth regions. Each of the selective growth regions is also preferably formed as a respective plurality of trenches that have sidewalls which expose compound semiconductor seeds from which epitaxial growth can take place.
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Citations
36 Claims
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1. A method of forming a semiconductor substrate, comprising the steps of:
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forming a plurality of selective growth regions at spaced locations on a first substrate, by forming a first selective growth region as a first plurality of trenches in the first substrate and forming a second selective growth region as a second plurality of trenches in the first substrate;
forming a plurality of semiconductor layers at spaced locations on the first substrate by epitaxially growing a first continuous semiconductor layer from sidewalls of the first plurality of trenches and epitaxially growing a second continuous semiconductor layer from sidewalls of the second plurality of trenches; and
dividing the first substrate into a plurality of second smaller substrates that contain only a respective one of the plurality of semiconductor layers, by partitioning the first substrate along a dicing trench that extends between the selective growth regions and is Wider than a width of each trench in the first plurality of trenches and a width of each trench in the second plurality of trenches. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method of forming a semiconductor substrate, comprising the steps of:
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forming a first selective growth region as a first plurality of trenches in a gallium nitride seed layer;
forming a second selective growth region as a second plurality of trenches in the gallium nitride seed layer;
pendeoepitaxially growing a first continuous gallium nitride layer from sidewalls of the first plurality of trenches;
pendeoepitaxially growing a second continuous gallium nitride layer from sidewalls of the second plurality of trenches; and
partitioning the gallium nitride seed layer between the first plurality of trenches and the second plurality of trenches, to define a first substrate comprising the first continuous gallium nitride layer and a second substrate comprising the second continuous gallium nitride layer. - View Dependent Claims (10, 11, 12)
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13. A method of forming a plurality of gallium nitride substrates, comprising the steps of:
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forming a plurality of trench arrays at spaced locations in a gallium nitride seed layer, each of said plurality of trench arrays spaced from another trench array by a respective dicing trench;
pendeoepitaxially growing a respective gallium nitride layer on each of the trench arrays; and
dividing the gallium nitride seed layer into a plurality of gallium nitride substrates by dicing the gallium nitride seed layer along a dicing street defined by a dicing trench. - View Dependent Claims (14, 15, 16, 17, 18, 19)
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20. A method of forming a plurality of compound semiconductor substrates, comprising the steps of:
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forming a plurality of trench arrays at spaced locations in a compound semiconductor seed layer;
growing a respective compound semiconductor layer on each of the trench arrays; and
dividing the compound semiconductor seed layer into a plurality of compound semiconductor substrates by dicing the compound semiconductor seed layer along dicing streets extending between the plurality of trench arrays. - View Dependent Claims (21, 22, 23, 24, 25, 26)
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27. A method of forming a semiconductor substrate, comprising the steps of:
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forming first and second semiconductor growth regions that are spaced apart by a dicing trench, on a supporting substrate comprising a semiconductor seed layer, said first semiconductor growth region comprising a first plurality of trenches that extend into the semiconductor seed layer, simultaneously epitaxially growing first and second continuous semiconductor layers that are spaced apart from each other but overhang a bottom of the dicing trench, from the first and second semiconductor growth regions, respectively, and without forming an epitaxial growth mask in the dicing trench; and
forming first and second semiconductor substrates comprising the first and second continuous semiconductor layers, respectively, by dicing the supporting substrate along the dicing trench. - View Dependent Claims (28, 29, 30)
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31. A method of forming a semiconductor substrate, comprising the steps of:
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forming a plurality of selective growth regions at spaced locations on a first substrate, by forming a first selective growth region as a first plurality of trenches in the first substrate and forming a second selective growth region as a second plurality of trenches in the first substrate;
forming a plurality of semiconductor layers at spaced locations on the first substrate by growing a first continuous semiconductor layer from at least portions of first mesas defined by the first plurality of trenches and growing a second continuous semiconductor layer from at least portions of second mesas defined by the second plurality of trenches; and
dividing the first substrate into a plurality of second smaller substrates that contain only a respective one of the plurality of semiconductor layers, by partitioning the first substrate between the selective growth regions. - View Dependent Claims (32, 33, 34, 35, 36)
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Specification