Chip carrier substrate

• US 6,262,376 B1
• Filed: 08/12/1999
• Issued: 07/17/2001
• Est. Priority Date: 01/24/1999
• Status: Expired due to Term

• Current Assignee: Amitec-Advanced Multilayer Interconnect Technologies Ltd.
• Original Assignee: Amitec-Advanced Multilayer Interconnect Technologies Ltd.
• Inventors: Katz, Dror, Hurwitz, Dror, Igner, Eva, Yofis, Boris
• Primary Examiner(s): PALADINI, ALBERT WILLIAM
• Application Number:
  US09/372,601
• Time in Patent Office: 705 Days
• Field of Search: 174/255, 174/262, 174/264, 361/762, 361/795, 257/750, 257/765
• US Class Current: 174/255
• CPC Class Codes: H01L 21/4846 Leads on or in insulating or insulated substrates, e.g. metallisation H01L21/4821 takes precedence; metallisation of ceramics in general C04B41/51; printed circuits H05K3/00
• CPC Class Codes: H01L 21/4857 Multilayer substrates multilayer metallisation on monolayer substrate H01L21/4846
• CPC Class Codes: H01L 23/498 Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers shape of the substrate H01L23/13
• CPC Class Codes: H01L 23/49822 Multilayer substrates multilayer metallisation on monolayer substrate H01L23/498
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/3011 Impedance
• CPC Class Codes: H05K 2203/0315 Oxidising metal
• CPC Class Codes: H05K 2203/1142 Conversion of conductive material into insulating material or into dissolvable compound
• CPC Class Codes: H05K 3/4647 by applying an insulating layer around previously made via studs

Abstract

A chip carrier substrate including a lower layer and at least one upper layer of copper conductors on a base, a plurality of aluminum studs formed by anodization to be of substantially identical height which interconnect the layers of conductors, a layer of barrier metal electrically connecting the aluminum studs and the copper conductors to prevent direct contact therebetween, the aluminum studs and at least the upper layer of copper conductor being surrounded by a polymeric dielectric material, and a layer of adhesion/barrier metal beneath the upper copper conductor layer, between the upper copper conductor layer and the dielectric material.

Claims

1. A chip carrier substrate comprising:

a lower conductor layer comprising a copper layer having an upper surface and a lower surface and at least one upper conductor layer comprising a copper layer having an upper surface and a lower surface, formed above a base;

a plurality of aluminum studs, formed by anodization to be of substantially identical height, interconnecting adjacent conductor layers;

a layer of barrier metal beneath each of said aluminum studs, electrically connecting each of said aluminum studs with a copper layer therebelow to prevent direct contact therebetween;

said aluminum studs and at least one said conductor layer being embedded in a polymeric dielectric material disposed on said base; and

a layer of adhesion/barrier metal covering the lower surface of the copper layer of each said upper conductor layer, thereby being disposed between at least one said upper conductor layer and said dielectric material and thereby connecting each of said aluminum studs with a copper layer thereabove.

2. The chip carrier substrate according to claim 1, wherein said base is a printed wiring board (PWB) or multi-layer ceramic (MLC) board, and one of said layers of copper conductor is a pre-formed part of said board.

3. A chip carrier substrate according to claim 1, wherein said base is a plain conducting base having no selective through-passage of electronic information from one side to the other.

4. A chip carrier substrate according to claim 1, wherein said base is a plain non-conducting base having no selective through-passage of electronic information from one side to the other.

5. The chip carrier substrate of claim 1, wherein said dielectric material has a dielectric constant of less than about 3.0.

6. The chip carrier substrate of claim 1, wherein said dielectric material includes a polyimide.

7. The chip carrier substrate of claim 1, wherein said dielectric material includes a benzocyclobutane.

8. The chip carrier substrate of claim 1, wherein said dielectric material includes a thermoplastic film polymer having a low dielectric constant.

9. The chip carrier substrate of claim 1, wherein said lower conductor layer comprises a layer of adhesion/barrier metal on the lower surface of the copper layer thereof, and is disposed directly on the base which is a non-electrically conductive base.

10. The chip carrier substrate of claim 1, wherein said lower conductor layer comprises a layer of adhesion/barrier metal on the lower surface of the copper layer thereof, and is disposed above the base which is an electrically conductive base, with the polymeric dielectric material disposed between the lower conductor layer and the base.

11. The chip carrier substrate of claim 10, additionally comprising a plurality of aluminum studs connecting the lower conductor layer and the electrically conductive base, with a layer of adhesion/barrier metal disposed between the copper layer of the lower conductor layer and each of the plurality of aluminum studs connecting the lower conductor layer and the electrically conductive base.

12. The chip carrier substrate of claim 1, wherein the lower conductor layer comprises an upper layer of a prepared base.

13. The chip carrier substrate of claim 1, wherein the barrier metal is a selectively etchable metal, the etching of which does not affect the copper layers or the aluminum studs.

14. The chip carrier substrate of claim 1, wherein the barrier metal is selected from the group consisting of tantalum, tungsten and titanium.

15. The chip carrier substrate of claim 1, wherein the adhesion/barrier metal is selected from the group consisting of titanium and chromium.