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Silicon carbide semiconductor device

  • US 6,262,439 B1
  • Filed: 11/27/1998
  • Issued: 07/17/2001
  • Est. Priority Date: 11/28/1997
  • Status: Expired due to Term
First Claim
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1. A silicon carbide semiconductor device comprising:

  • a semiconductor substrate made of single crystal silicon carbide, in which a first conductivity type second semiconductor layer and a second conductivity type third semiconductor layer are successively deposited on a first conductivity type first semiconductor layer, said second semiconductor layer having a resistance value higher than said first semiconductor layer;

    a trench formed in said semiconductor substrate so as to penetrate said third semiconductor layer and to reach said second semiconductor layer;

    a first conductivity type semiconductor region formed in a surface portion of said third semiconductor layer, wherein said semiconductor region is divided into first and second regions, said first region is disposed around said trench so that a side surface of said first region is exposed to said trench, and said second region is disposed to be distant from said trench and to be adjacent to said first region;

    a gate insulation film formed on an inner wall of said trench;

    a gate electrode formed on said gate insulation film in said trench;

    an interlayer insulation film formed on said gate electrode to cover said gate electrode;

    a first electrode layer formed on said interlayer insulation layer and electrically connected to said second region; and

    a second electrode layer electrically connected to said first semiconductor layer, wherein a thickness of said third semiconductor layer between said second region and said second semiconductor layer is made thinner than that of said third semiconductor layer between said first region and said second semiconductor layer.

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