Tunable fiber Fabry-Perot surface-emitting lasers

• US 6,263,002 B1
• Filed: 09/04/1998
• Issued: 07/17/2001
• Est. Priority Date: 09/05/1997
• Status: Expired due to Term

• Current Assignee: Applied Optoelectronics
• Original Assignee: Micron Optics Incorporated (Luna Innovations, Inc.)
• Inventors: Hsu, Kevin, Miller, Calvin M.
• Primary Examiner(s): Font, Frank G.
• Assistant Examiner(s): FORDE, DELMA ROSA
• Application Number:
  US09/148,719
• Time in Patent Office: 1,047 Days
• Field of Search: 372/6, 372/20, 372/43, 372/24, 372/42
• US Class Current: 372/6
• CPC Class Codes: G02B 6/4202 for coupling an active element with fibres without intermediate optical elements, e.g. fibres with plane ends, fibres with shaped ends, bundles
• CPC Class Codes: G02B 6/4215 the intermediate optical elements being wavelength selective optical elements, e.g. variable wavelength optical modules or wavelength lockers G02B6/4246 takes precedence
• CPC Class Codes: G02B 6/424 Mounting of the optical light guide
• CPC Class Codes: G02B 6/4245 Mounting of the opto-electronic elements
• CPC Class Codes: G02B 6/4259 of the transparent type
• CPC Class Codes: H01S 5/02251 using optical fibres
• CPC Class Codes: H01S 5/041 Optical pumping
• CPC Class Codes: H01S 5/14 External cavity lasers H01S5/18 takes precedence; mode locking H01S5/065
• CPC Class Codes: H01S 5/146 using a fiber as external cavity
• CPC Class Codes: H01S 5/147 having specially shaped fibre, e.g. lensed or tapered end portion
• CPC Class Codes: H01S 5/183 having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
• CPC Class Codes: H01S 5/36 comprising organic materials

Abstract

This invention provides compact, fixed-wavelength and tunable fiber-optic lasers comprising a gain medium, for example a semiconductor, half-cavity VCSEL, or an organic light emitting polymer, within a Fabry-Perot cavity wherein one of the mirrors forming the cavity is a mirror integral with a fiber, for example a mirror (metallic or dielectric, for example) deposited at a fiber end, a reflective tap within an optical fiber, a fiber Bragg Grating (FBG), or a fiber loop mirror. Semiconductor gain material can be bulk semiconductor material or comprise a semiconductor multiple quantum well region. The gain medium itself is not confined to a fiber. The FP cavity of these lasers typically contains a thin active medium ranging up to about 10 μm in length, but more preferably about 1 to about 21 μm in thickness

Claims

1. A laser which comprises a gain element within a Fabry-Perot cavity formed between a first and a second mirror wherein the first mirror is an optical fiber-integrated mirror and wherein the gain element is not confined within an optical fiber.

2. The laser of claim 1 wherein the gain element comprises a gain medium selected from a semiconductor or an organic light-emitting polymer.

3. The laser of claim 1 wherein the gain element comprises a semiconductor multiple quantum well gain region or a semiconductor bulk gain region.

4. The laser of claim 1 wherein the gain element is a thin layer less than about 10 microns thick within the Fabry-Perot cavity.

5. The laser of claim 1 wherein the second mirror is a semiconductor Bragg reflector.

6. The laser of claim 1 wherein the first mirror is a direct fiber dielectric mirror.

7. The laser of claim 1 wherein the first mirror is a fiber waveguide dielectric mirror.

8. The laser of claim 1 wherein the first mirror is an in-fiber Bragg grating.

9. The laser of claim 1 wherein the first mirror is a fiber loop mirror.

11. The laser of claim 1 which is electrically pumped.

12. The laser of claim 1 wherein the Fabry-Perot cavity is formed in an optical fiber ferrule assembly.

13. The laser of claim 12 wherein the optical fiber ferrule assembly comprises a mirror-ended fiber ferrule.

14. The laser of claim 13 wherein the optical fiber ferrule assembly comprises a wafered ferrule with embedded mirror.

15. The laser of claim 1 wherein the gain element is attached to the internal end face of a metal ferrule.

16. The laser of claim 14 wherein the gain element comprises a semiconductor multiple quantum well gain region or a semiconductor bulk gain region.

17. The laser of claim 15 wherein the semiconductor multiple quantum well gain region is an InGaAsP or an AlGaAs active region.

18. The laser of claim 1 that is tunable.

19. The laser of claim 1 having an air gap in the Fabry-Perot cavity and that is tuned by changing the length of the air gap within the Fabry-Perot cavity.

20. The laser of claim 1 that is tunable by changing the length of the single mode fiber within the Fabry-Perot cavity by application of a mechanical or electromechanical force or a temperature change to stretch and/or contract the fiber.

21. The laser of claim 1 which comprises a ferrule assembly having a first and a second ferrule at least one of which is a fiber ferrule having an axial fiber path there through and wherein alignment of the first and second ferrules forms the Fabry-Perot cavity, the first fiber-integrated mirror of the Fabry-Perot cavity being contained in that fiber ferrule, the second mirror of the Fabry-Perot cavity being a semiconductor Bragg grating attached to the second ferrule, the gain element within the Fabry-Perot cavity comprising a semiconductor multiple quantum well gain region integral with the second mirror wherein alignment of the first and second ferrules forms the Fabry-Perot cavity.

10. The laser of claim which is optically pumped.