Process chamber having improved gas distributor and method of manufacture

• US 6,263,829 B1
• Filed: 01/22/1999
• Issued: 07/24/2001
• Est. Priority Date: 01/22/1999
• Status: Expired due to Fees

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Schneider, Gerhard, Weldon, Edwin C.
• Primary Examiner(s): Mills, Gregory
• Assistant Examiner(s): Zervigon, Rudy
• Application Number:
  US09/235,861
• Time in Patent Office: 914 Days
• Field of Search: 118/723.I, 118/723.E, 118/723.ER, 118/723.R, 118/723.ME, 118/723.MP, 156/345, 204/298.33
• US Class Current: 118/723.00I
• CPC Class Codes: C23C 16/455 characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
• CPC Class Codes: C23C 16/45521 the gas, other than thermal contact gas, being introduced the rear of the substrate to flow around its periphery

Abstract

A process chamber 15 for processing a substrate 30, such as a semiconductor wafer, comprises a support 20 having a surface 25 for supporting the substrate 30. A gas distributor 50 in the chamber comprises a gas manifold 110 comprising at least one insert 140 having an orifice 115 for passing gas from the gas manifold 110 into the process chamber 15. Preferably, the gas manifold 110 extends about a perimeter 130 of the substrate 30 and comprises a plurality of inserts 140 made from dielectric material.

Claims

1. A process chamber capable of processing a substrate, the process chamber comprising:

(a) a support having a surface capable of receiving the substrate; and

(b) a gas distributor comprising a gas manifold having at least one insert comprising an orifice capable of introducing gas from the gas manifold to the process chamber to process the substrate.

2. A process chamber according to claim 1 wherein the gas manifold extends about the surface capable of receiving the substrate.

3. A process chamber according to claim 1 wherein the gas manifold comprises a cavity disposed about the surface capable of receiving the substrate.

4. A process chamber according to claim 1 wherein the gas manifold is in the support.

5. A process chamber according to claim 4 wherein the insert comprises a thickness that is sufficiently high to reduce erosion of the gas manifold from a plasma of the gas.

6. A process chamber according to claim 5 wherein the insert comprises a thickness of from about 1 mm to about 20 mm.

7. A process chamber according to claim 1 wherein the gas manifold comprises a plurality of inserts.

8. A process chamber according to claim 7 wherein at least two of the inserts have orifices with different diameters.

9. A process chamber according to claim 1 wherein the insert comprises a dielectric material.

10. A process chamber according to claim 9 wherein the dielectric material comprises a ceramic.

11. A process chamber according to claim 1 wherein the insert is secured in the gas manifold by a stake extending around a portion of a periphery of the insert.

12. A process chamber according to claim 1 wherein the orifice comprises a diameter of from about 100 to about 1200 microns.

13. A process chamber according to claim 1 wherein the orifice in the insert is oriented to direct gas into the process chamber at an inclined angle relative to a plane of the substrate.

14. A process chamber according to claim 13 wherein the orifice in the insert is oriented to direct gas toward a ceiling of the process chamber.

15. A process chamber according to claim 14 wherein the ceiling comprises aluminum oxide, silicon dioxide, silicon carbide, or silicon.

16. A process chamber according to claim 1 wherein the insert is removable from the gas manifold.

17. A process chamber capable of processing a substrate, the process chamber comprising a support having a surface capable of receiving the substrate, the support comprising a gas manifold about the surface capable of receiving the substrate, and the gas manifold comprising an insert having an orifice capable of introducing gas from the gas manifold into the process chamber to process the substrate.

18. A process chamber according to claim 17 wherein the gas manifold extends about the surface capable of receiving the substrate.

19. A process chamber according to claim 17 wherein the gas manifold comprises a cavity in the support.

20. A process chamber according to claim 17 wherein the insert comprises a thickness that is sufficiently high to reduce erosion of the gas manifold from a plasma of the gas.

21. A process chamber according to claim 17 comprising a plurality of inserts having orifices with different diameters.

22. A process chamber according to claim 17 wherein the insert comprises a dielectric material.

23. A process chamber according to claim 17 wherein the orifice in the insert is oriented to direct gas toward a ceiling of the process chamber.

24. A process chamber according to claim 17 wherein the orifice in the insert is oriented to direct gas into the process chamber at an inclined angle relative to a plane of the substrate.

25. A process chamber according to claim 17 wherein the insert is removable from the gas manifold.

26. A process chamber capable of processing a substrate, the process chamber comprising:

(a) a support having a surface capable of receiving the substrate; and

(b) a gas distributor comprising an insert and a plurality of orifices, one or more of the orifices being oriented to direct gas into the process chamber.

27. A process chamber according to claim 26 wherein the orifices are oriented to direct gas into the process chamber at an angle of from about 10 to about 75°

relative to a plane of the surface capable of receiving the substrate.

28. A process chamber according to claim 26 wherein the orifices are oriented to direct gas toward a ceiling of the process chamber.

29. A process chamber according to claim 28 wherein the ceiling comprises one or more of aluminum oxide, silicon dioxide, silicon carbide, or silicon.

30. A process chamber according to claim 26 wherein the gas distributor comprises a gas manifold having the insert.

31. A process chamber according to claim 30 wherein the gas manifold extends about the surface cable of receiving the substrate.

32. A process chamber according to claim 26 wherein the orifices comprise diameters of from about 100 micron to about 1200 micron.

33. A process chamber capable of processing a substrate, the process chamber comprising:

(a) a support having a surface capable of receiving the substrate; and

(b) a gas distributor comprising a gas manifold having a removable insert therein, the removable insert comprising at least one orifice capable of passing gas from the gas manifold in the process chamber.

34. The process chamber of claim 33 wherein the gas distributor comprises a plurality of removable inserts.

35. The process chamber of claim 33 wherein the gas manifold comprises a hole and the removable insert fits in the hole with a gas-tight seal.

36. The process chamber of claim 35 wherein the removable insert comprises a thread that mates with a thread in the hole of the gas manifold.

37. The process chamber of claim 33 wherein the removable insert comprises a dielectric material.

38. A kit comprising removable inserts capable of being placed in a gas manifold of a process chamber useful in the processing of a substrate, each removable insert comprising an orifice capable of passing gas from the gas manifold into the process chamber.

39. A kit according to claim 38 wherein at least one orifice has a diameter of at least about 100 micron.

40. A kit according to claim 38 wherein at least one orifice has a diameter of less than 1200 micron.

41. A kit according to claim 38 wherein the removable inserts each comprise a surface that mates with a hole in the gas manifold to form a substantially gas-tight seal.

42. A process chamber capable of processing a substrate, the process chamber comprising:

(a) a support having a receiving surface capable of receiving the substrate; and

(b) a gas distributor comprising a gas manifold having orifices capable of passing a gas from the gas manifold into the process chamber, the orifices having an interior dielectric surface.

43. A process chamber according to claim 42 wherein the orifices are spaced apart in the gas manifold to provide a flow of gas across a substrate received on the support, whereby the substrate may be substantially uniformly processed.

44. A process chamber according to claim 42 wherein at least one orifice has a diameter of at least about 100 micron.

45. A process chamber according to claim 42 wherein at least one orifice has a diameter of less than about 1200 micron.

46. A process chamber according to claim 42 wherein the orifices are in removable inserts.

47. A substrate processing chamber comprising:

(a) a support having a surface capable of receiving a substrate; and

(b) an orifice in the processing chamber, the orifice comprising a holder capable of holding an insert in the orifice.

48. A processing chamber according to claim 47 wherein the orifice is in a gas distributor capable of providing a gas to process a substrate in the processing chamber.

49. A processing chamber according to claim 47 wherein the holder allows thermal expansion of the insert.

50. A processing chamber according to claim 47 wherein the holder comprises a securing stake.

51. A processing chamber according to claim 47 wherein the holder comprises a sidewall having an annular apex that is adapted to hold the insert.

52. A processing chamber according to claim 47 wherein the holder comprises a malleable metal surface.

53. A processing chamber according to claim 47 wherein the orifice is in a gas manifold.

54. A processing chamber according to claim 53 wherein the gas manifold comprises radially concentric channels.

55. A processing chamber according to claim 54 wherein at least one channel is radially offset from another channel.