Method for the manufacture of a light emitting diode

• US 6,265,236 B1
• Filed: 07/18/1996
• Issued: 07/24/2001
• Est. Priority Date: 10/09/1995
• Status: Expired due to Fees

• Current Assignee: Temic Telefunken Microelectronic GmbH (Continental AG)
• Original Assignee: Temic Telefunken Microelectronic GmbH (Continental AG)
• Inventors: Gerner, Jochen
• Primary Examiner(s): Bowers, Charles
• Assistant Examiner(s): Hawranek, Scott J.
• Application Number:
  US08/683,432
• Time in Patent Office: 1,832 Days
• Field of Search: 438/22, 438/29, 438/71, 438/38, 438/32, 438/48, 438/46, 257/98, 257/FOR.157
• US Class Current: 438/22
• CPC Class Codes: H01L 33/025 Physical imperfections, e.g. particular concentration or distribution of impurities
• CPC Class Codes: H01L 33/40 Materials therefor

Abstract

A method for manufacturing a light emitting diode with the following process steps. Preparation of a substrate; production on the substrate of a series of layers which include the pn junction, that generates the radiation; production of contact layers on the surface of the layers including the pn junction and generating the radiation, and on the rear side of the substrate; and tempering of the contact layers. The method is characterized by the surface of the layers including the pn junction and generating the radiation being frosted or roughened before the contact layers are deposited. Through frosting the front side, it is possible to increase the luminous efficiency of the diodes by about 25%. Since the frost-etching process is performed before the contact layers are produced, this method can be used when aluminum is to be used as the contact material. Since the frosting is restricted to the front side of the diodes and the electrically active pn junction emerges to the surface at the lateral areas, the life of the diodes is not adversely affected by the method.

Claims

1. Method for manufacturing a light emitting diode with the following process steps:

preparing a substrate;

producing on the substrate a series of layers which include a pn junction that generates light radiation;

depositing contact layers on an outer surface of the series of layers including the pn junction that generates the radiation and on a rear side of the substrate;

tempering the contact layers; and

wherein

the outer surface of the layers including the pn junction that generates the light radiation is fine-frosted, whereby the luminous intensity of the light-emitting diode is increased, before deposition of the contact layers.

2. Method in accordance with claim 1, wherein the substrate is made of (1 1 1)-oriented gallium phosphide.

3. Method in accordance with claim 2, wherein the layers including the pn transition that generates the light radiation is made of gallium phosphide.

4. Method in accordance with claim 3, wherein the fine-frosting of the only surface of the layers including the pn junction that generates the radiation is performed by wet chemical etching with a mixture of phosphoric acid, hydrochloric acid and acetic acid.

5. Method in accordance with claim 4, wherein the ratio of phosphoric acid:

hydrochloric acid;

acetic acid is 1;

1;

1.

6. Method in accordance with claim 5, wherein a roughness depth of the fine-frosting outer surface is less than 1 μ

m.

7. Method in accordance with claim 1, wherein the contact layers on the surface of the layers including the pn junction that generates the radiation and on the rear side of the substrate are tempered in a single process step.

8. A method of manufacturing a light emitting diode including the following steps in sequence:

providing a semiconductor substrate;

forming a series of semiconductor layers including a pn junction which generates light radiation on a front surface of the substrate;

fine-frosting an outer surface of the series of layers, whereby the luminous intensity of the light emitting diode will be increased;

forming a first ohmic contact layer on the fine-frosted outer surface of the series of layers, and a second contact layer on a rear surface of the substrate; and

, tempering the first and second contact layers.

9. A method as defined in claim 8, wherein the step of fine-frosting comprises etching the outer surface.

10. A method as defined in claim 9, wherein the step of fine-frosting comprises etching the outer layer to a roughness depth of less than 1 μ

.

11. A method as defined in claim 9, wherein:

the substrate is made of (111)-oriented gallium phosphide;

the layers are made of gallium phosphide; and

the step of etching is performed with a mixture of phosphoric acid, hydrochloric acid and acetic acid.

12. A method as defined in claim 11, wherein the ratio of the respective acids is 1:

1;

1.

13. A method as defined in claim 9, wherein the step of roughening comprises etching the outer layer to a roughness depth of less than 1 μ

.