Method for making an integrated circuit capacitor including tantalum pentoxide
First Claim
1. A method for making an integrated circuit capacitor comprising the steps of:
- forming a first metal electrode adjacent a semiconductor substrate;
forming a tantalum pentoxide layer on the first metal electrode while maintaining a temperature below an oxidizing temperature thereof;
performing at least one remote plasma anneal of the tantalum pentoxide layer while maintaining a temperature below the oxidizing temperature of the first metal electrode; and
forming a second electrode adjacent the tantalum pentoxide layer after the step of annealing and while maintaining a temperature below the oxidizing temperature of the first metal electrode.
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Abstract
A method for making an integrated circuit capacitor which in one embodiment preferably comprises the steps of: forming, adjacent a semiconductor substrate, a first metal electrode comprising a metal nitride surface portion; forming a tantalum pentoxide layer on the metal nitride surface portion while maintaining a temperature below an oxidizing temperature of the metal; remote plasma annealing the tantalum pentoxide layer; and forming a second electrode adjacent the tantalum pentoxide layer. The step of forming the tantalum pentoxide layer preferably comprises chemical vapor deposition of the tantalum pentoxide at a temperature below about 500° C. Accordingly, oxidation of the metal is avoided and a high quality tantalum pentoxide is produced. The metal of the first metal electrode may comprise at least one of titanium, tungsten, tantalum, and alloys thereof.
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Citations
27 Claims
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1. A method for making an integrated circuit capacitor comprising the steps of:
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forming a first metal electrode adjacent a semiconductor substrate;
forming a tantalum pentoxide layer on the first metal electrode while maintaining a temperature below an oxidizing temperature thereof;
performing at least one remote plasma anneal of the tantalum pentoxide layer while maintaining a temperature below the oxidizing temperature of the first metal electrode; and
forming a second electrode adjacent the tantalum pentoxide layer after the step of annealing and while maintaining a temperature below the oxidizing temperature of the first metal electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
forming at least one dielectric layer adjacent the semiconductor substrate; and
forming an opening in the at least one dielectric layer; and
wherein the step of forming the first metal electrode comprises forming the first metal electrode to line the opening in the at least one dielectric layer.
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12. A method according to claim 1 wherein the step of forming the first metal electrode comprises the steps of forming a first metal layer and nitridizing an upper surface portion thereof.
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13. A method according to claim 12 wherein the step of nitridizing comprises exposing the first metal layer to a nitrogen containing ambient while maintaining a temperature below the oxidizing temperature of the metal.
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14. A method according to claim 1 wherein the step of forming the first metal layer electrode comprises depositing a first metal layer and depositing a metal nitride layer thereon while maintaining a temperature below the oxidizing temperature of the metal.
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15. A method for making an integrated circuit capacitor comprising the steps of:
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forming a first metal electrode adjacent a semiconductor substrate;
forming a tantalum pentoxide layer on the first electrode while maintaining a temperature below about 500°
C. for a time period of less than about 10 minutes;
performing at least one remote plasma anneal of the tantalum pentoxide layer while maintaining a temperature below about 500°
C.; and
forming a second electrode adjacent the tantalum pentoxide layer after the step of annealing and while maintaining a temperature below about 500°
C.- View Dependent Claims (16, 17, 18, 19, 20, 21, 22)
forming at least one dielectric layer adjacent the semiconductor substrate; and
forming an opening in the at least one dielectric layer; and
wherein the step of forming the first metal electrode comprises forming the first metal electrode to line the opening in the at least one dielectric layer.
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23. A method for making an integrated circuit capacitor comprising the steps of:
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forming, adjacent a semiconductor substrate, a first metal electrode comprising at least one of titanium, tungsten, tantalum, and alloys thereof;
forming a tantalum pentoxide layer on the first metal electrode while maintaining a temperature below about 500°
C.;
remote plasma annealing the tantalum pentoxide layer in a pure nitrogen plasma;
remote plasma annealing the tantalum pentoxide layer in a nitrogen and oxygen plasma after the pure nitrogen anneal; and
forming a second electrode adjacent the tantalum pentoxide layer after the remote plasma annealing in the nitrogen and oxygen plasma. - View Dependent Claims (24, 25, 26, 27)
forming at least one dielectric layer adjacent the semiconductor substrate; and
forming an opening in the at least one dielectric layer;
wherein the step of forming the first metal electrode comprises forming the first metal electrode to line the opening in the at least one dielectric layer.
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Specification