Fabricating method for a semiconductor device comprising gate oxide layers of various thicknesses
First Claim
1. A fabrication method for a semiconductor device comprising various thicknesses of oxide layers, which is applicable to a substrate comprising a first region and a second region, the method comprising the steps of:
- forming a first oxide layer on the substrate;
forming a doped polysilicon layer on the first oxide layer;
removing the first oxide layer and the doped polysilicon layer in the first region to expose the substrate of the first region;
forming a second oxide layer on the substrate in the first region;
oxidizing the doped polysilicon layer to a poly-oxide layer; and
removing the poly-oxide layer to expose the first oxide layer, wherein the first oxide layer is thicker than the second oxide layer.
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Abstract
A method of fabricating a semiconductor device with various thicknesses of the gate oxide layers is described, which method is applicable to a substrate having a first region and a second region, wherein the first region has a first conductive layer to isolate the first gate oxide layer from the substrate. Thereafter, a first oxide layer/nitride layer is formed on the first conductive layer, followed by forming a doped polysilicon layer on the first oxide layer/nitride layer, wherein the doped polysilicon layer is not formed in the second region. Subsequently, a second gate oxide layer is formed on the substrate of the second region, whereas a first oxide layer/nitride layer/second oxide layer is concurrently converted from the oxide layer/nitride layer/doped polysilicon layer. A defined second conductive layer is then formed on the first oxide layer/nitride layer/second oxide layer and the second gate oxide layer.
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Citations
6 Claims
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1. A fabrication method for a semiconductor device comprising various thicknesses of oxide layers, which is applicable to a substrate comprising a first region and a second region, the method comprising the steps of:
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forming a first oxide layer on the substrate;
forming a doped polysilicon layer on the first oxide layer;
removing the first oxide layer and the doped polysilicon layer in the first region to expose the substrate of the first region;
forming a second oxide layer on the substrate in the first region;
oxidizing the doped polysilicon layer to a poly-oxide layer; and
removing the poly-oxide layer to expose the first oxide layer, wherein the first oxide layer is thicker than the second oxide layer. - View Dependent Claims (2, 3, 4, 5, 6)
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Specification