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High temperature oxide deposition process for fabricating an ONO floating-gate electrode in a two bit EEPROM device

  • US 6,265,268 B1
  • Filed: 10/25/1999
  • Issued: 07/24/2001
  • Est. Priority Date: 10/25/1999
  • Status: Expired due to Term
First Claim
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1. A process for fabricating an ONO floating-gate electrode in a two-bit EEPROM device comprising the steps of:

  • providing a semiconductor substrate;

    thermally growing a first silicon oxide layer overlying the semiconductor substrate;

    forming a silicon nitride layer overlying the first silicon oxide layer; and

    maintaining at least two charge isolation regions in the silicon nitride layer by depositing a second layer of silicon oxide overlying the silicon nitride layer using a high temperature oxide deposition process, wherein the high temperature oxide deposition process is carried out at a temperature of about 700 to about 800°

    C.

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