Method for fabricating a concave bottom oxide in a trench
First Claim
1. A method for forming a concave bottom oxide layer in a trench, comprising:
- providing a semiconductor substrate;
forming a pad oxide layer on said semiconductor substrate;
forming a silicon nitride layer on said pad oxide layer;
etching said silicon nitride layer, said pad oxide layer and said semiconductor substrate to form said trench in said semiconductor substrate;
depositing a silicon oxide layer to refill into said trench and cover on said silicon nitride layer, wherein said silicon oxide layer has overhang portions at the silicon nitride corners of said trench;
anisotropically etching said silicon oxide layer to form a concave bottom oxide layer in said trench;
etching said silicon oxide layer to remove said silicon oxide layer on said silicon nitride layer and on sidewalls of said trench; and
removing said silicon nitride layer and said pad oxide layer.
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Accused Products
Abstract
A method for forming a concave bottom oxide layer in a trench, comprising: providing a semiconductor substrate; forming a pad oxide layer on the semiconductor substrate; forming a silicon nitride layer on the pad oxide layer; etching the silicon nitride layer, the pad oxide layer and the semiconductor substrate to form the trench in the semiconductor substrate; depositing a silicon oxide layer to refill into the trench and cover on the silicon nitride layer, wherein the silicon oxide layer has overhang portions at corners of the trench; anisotropically etching the silicon oxide layer to form a concave bottom oxide layer in the trench; etching the silicon oxide layer to remove the silicon oxide layer on the silicon nitride layer and the sidewalls of the trench; removing the silicon nitride layer and the pad oxide layer.
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Citations
14 Claims
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1. A method for forming a concave bottom oxide layer in a trench, comprising:
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providing a semiconductor substrate;
forming a pad oxide layer on said semiconductor substrate;
forming a silicon nitride layer on said pad oxide layer;
etching said silicon nitride layer, said pad oxide layer and said semiconductor substrate to form said trench in said semiconductor substrate;
depositing a silicon oxide layer to refill into said trench and cover on said silicon nitride layer, wherein said silicon oxide layer has overhang portions at the silicon nitride corners of said trench;
anisotropically etching said silicon oxide layer to form a concave bottom oxide layer in said trench;
etching said silicon oxide layer to remove said silicon oxide layer on said silicon nitride layer and on sidewalls of said trench; and
removing said silicon nitride layer and said pad oxide layer. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method for forming a concave bottom oxide layer in a trench, comprising:
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providing a semiconductor substrate;
forming a pad oxide layer on said semiconductor substrate;
forming a silicon nitride layer on said pad oxide layer;
etching said silicon nitride layer, said pad oxide layer and said semiconductor substrate to form said trench in said semiconductor substrate;
depositing a silicon oxide layer by using a plasma enhanced chemical vapor deposition (PECVD) process to refill into said trench and cover on said silicon nitride layer whereby overhang portions of said silicon oxide layer are formed at the silicon nitride corners of said trench;
anisotropically etching said silicon oxide layer to form a concave bottom oxide layer in said trench by using said overhang portions of said silicon oxide layer to protect said silicon oxide layer near sidewalls at a bottom of said trench;
etching said silicon oxide layer to remove said silicon oxide layer on said silicon nitride layer and on said sidewalls of said trench; and
removing said silicon nitride layer and said pad oxide layer.- View Dependent Claims (8, 9, 10)
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11. A method for forming a power MOS in a trench, comprising:
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providing a semiconductor substrate;
forming a pad oxide layer on said semiconductor substrate;
forming a silicon nitride layer on said pad oxide layer;
etching said silicon nitride layer, said pad oxide layer and said semiconductor substrate to form said trench in said semiconductor substrate;
depositing a silicon oxide layer by using a plasma enhanced chemical vapor deposition (PECVD) process to refill into said trench and cover on said silicon nitride layer whereby overhang portions of said silicon oxide layer are formed at the silicon nitride corners of said trench;
anisotropically etching said silicon oxide layer to form a concave bottom oxide layer in said trench by using said overhang portions of said silicon oxide layer to protect said silicon oxide layer near sidewalls at a bottom of said trench;
etching said silicon oxide layer to remove said silicon oxide layer on said silicon nitride layer and on said sidewalls of said trench;
removing said silicon nitride layer and said pad oxide layer; and
forming said power MOS in said trench. - View Dependent Claims (12, 13, 14)
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Specification