Forming attached features on a semiconductor substrate

• US 6,265,757 B1
• Filed: 11/09/1999
• Issued: 07/24/2001
• Est. Priority Date: 11/09/1999
• Status: Expired due to Term

• Current Assignee: Avago Technologies International Sales Pte Limited (Broadcom, Inc.)
• Original Assignee: Agere Systems Guardian Corp. (Broadcom, Inc.)
• Inventors: Brady, Michael F., Nijander, Casimir R., Osenbach, John W., Palin, Michael G., Yudina, Aleksandra
• Primary Examiner(s): Smith, Matthew
• Assistant Examiner(s): Lee, Calvin
• Application Number:
  US09/435,640
• Time in Patent Office: 623 Days
• Field of Search: 438/500, 438/695, 438/33, 438/464, 156/653, 156/651, 156/644, 156/662, 156/661.1, 156/659, 156/657, 156/647, 257/622, 257/623, 257/627, 257/628
• US Class Current: 257/623
• CPC Class Codes: H01S 5/005 Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping H01S5/026, H01S5/18388 take precedence
• CPC Class Codes: H01S 5/02326 Arrangements for relative positioning of laser diodes and optical components, e.g. grooves in the mount to fix optical fibres or lenses

Abstract

A method for creating attached features while controlling the depth profile between the features is presented. First the features are formed with a separating barrier between the features. The separating barrier is then etched in a second step with an orientation dependent etchant to attach the two feature. This method can be used to create attached features of relative similar sizes or attached features of disparate sizes.

Claims

1. A microelectronic structure in a semiconductor substrate comprising:

a small feature formed into said substrate to a predetermined depth and having sidewalls which are (111) surfaces;

a large feature formed into said substrate to a predetermined depth and having sidewalls which are (111) surfaces, wherein said large feature is at least about 10 times as deep as said small feature; and

a transition region between said small and large features, wherein said transition region has a maximum depth in said substrate which is less than about half the depth of said large feature.

2. The structure of claim 1, wherein said large feature is at least about 25 times as deep as said small feature.

3. The structure of claim 1, wherein the bottom of said large feature is defined by the intersection of sidewalls which are (111) surfaces.

4. The structure of claim 1, wherein the bottom of said large feature is defined by a (100) surface bounded by sidewalls which are (111) surfaces.

5. The structure of claim 1, wherein the maximum depth of the transition region is less than about 25% of the depth of the large feature.

6. The structure of claim 1, wherein the minimum depth of the transition region is greater than the maximum depth of the small feature.

7. A microelectronic structure for use in a laser module comprising:

a large feature for holding a ball lens, wherein the sidewalls of the feature are (111) surfaces;

a small feature to provide a pathway for laser light, wherein the sidewalls of the feature are (111) surfaces;

a metal bonding pad in close proximity to the small feature as a mounting point for a laser; and

a transition region where the small feature and large feature are attached, wherein said transition region has a maximum depth which is less than half of the depth of the large feature.

8. The structure of claim 7, wherein said large feature is about ten times as deep as said small feature.

9. The structure of claim 7, wherein said large feature is about 25 times as deep as said small feature.

10. The structure of claim 7, wherein the bottom of said large feature is defined by the intersection of sidewalls which are (111) surfaces.

11. The structure of claim 7, wherein the bottom of said large feature is defined by a (100) surface bounded by sidewalls which are (111) surfaces.

12. The structure of claim 7, wherein the maximum depth of the transition region is less than approximately 25% of the depth of the large feature.

13. The structure of claim 7, wherein the minimum depth of the transition region is greater than the maximum depth of the small feature.