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Method and material for integration of fuorine-containing low-k dielectrics

  • US 6,265,779 B1
  • Filed: 08/11/1998
  • Issued: 07/24/2001
  • Est. Priority Date: 08/11/1998
  • Status: Expired due to Term
First Claim
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1. An interconnect structure comprising one or more layers of fluorinated dielectric insulation and one or more layers of conductive wiring patterns electrically connected by conductive vias, said conductive wiring patterns and vias completely isolated from said fluorinated dielectric insulation by at least one fluorine-resistant capping material selected from the group consisting of Ag, Co, Cr, In, Ir, Mn, Pd, Pt, Sn, their oxides, fluorides, nitrides, and silicides, mixtures thereof, Si-containing DLC and Si-O-containing DLC.

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