Plasma processing method and apparatus with control of rf bias

• US 6,265,831 B1
• Filed: 03/31/1999
• Issued: 07/24/2001
• Est. Priority Date: 03/31/1999
• Status: Expired due to Term

• Current Assignee: Lam Research Corporation
• Original Assignee: Lam Research Corporation
• Inventors: Olson, Christopher, Howald, Arthur M., Holland, John P.
• Primary Examiner(s): Shingleton, Michael B.
• Application Number:
  US09/281,808
• Time in Patent Office: 846 Days
• Field of Search: 315/111.21, 315/111.31, 315/111.71, 156/345, 118/723.R, 118/723.I, 118/723.E, 118/723.AN
• US Class Current: 315/111.21
• CPC Class Codes: H01J 37/32082 Radio frequency generated discharge H01J37/32357, H01J37/32366, H01J37/32394 and H01J37/32403 take precedence
• CPC Class Codes: H01J 37/32174 Circuits specially adapted for controlling the RF discharge
• CPC Class Codes: H03H 7/40 Automatic matching of load impedance to source impedance

Abstract

A tendency for a discontinuity to occur in the amount of power reflected back to an r.f. bias source of a vacuum plasma processor is overcome by controlling the r.f. bias source output power so the power delivered to plasma in a vacuum processing chamber remains substantially constant. The r.f bias source output power is changed much faster than changes in capacitors of a matching network connecting the r.f. bias power source to an electrode of a workpiece holder processor. A capacitive impedance component of the plasma is determined by optically measuring the thickness of a plasma sheath in the chamber.

Claims

1. A method of controlling an a.c. plasma treating a workpiece in a vacuum plasma processing chamber, the workpiece being on a workpiece holder having an electrode, the method being performed in accordance with a recipe having a set of parameters including at least one gas supplied to the chamber, flow rate of the gas supplied to the chamber, pressure range in the chamber, power range supplied to an excitation reactance for the plasma and power range supplied to the electrode, the method comprising

supplying a.c. from a first a.c. source to the plasma via a first circuit including an excitation reactance and a first matching network including first and second variable reactances,

sensing a first function related to a load including the plasma as seen by the first circuit,

controlling the first and second reactances in response to the sensed first function to maintain a predetermined relation between functions of (a) the output impedance of the first source and (b) the impedance the first source drives,

supplying a.c. from a second a.c. source to the plasma via the electrode and a second matching network including third and fourth variable reactances,

sensing a second function related to the impedance of the plasma,

controlling the third and fourth variable reactances in response to the sensed second function to maintain a substantially matched condition between the output impedance of the second source and the impedance the second source drives, power reflected back to the second source having a tendency to have a step change as a result of a small variation in the value of at least one of the third and fourth reactances from the values which provide a match between the output impedance of the second source and the load the second source drives, the at least one small change resulting from an incremental change in at least one of the parameters while the one parameter remains in a range consistent with the recipe, and

overcoming the tendency for the step change by varying the output power of the second source in response to a function of plasma impedance, the second source output power being varied at a speed much faster than the speed that the third and fourth reactances change to produce the tendency to have the step change.

2. The method of claim 1 wherein the function of plasma impedance which results in the output power of the second source varying results from measurements of electric parameters seen by looking from second source toward the matching network.

3. The method of claim 1 wherein the function of plasma impedance which results in the output power of the second source varying is a function of plasma impedance coupled to the electrode.

4. The method of claim 3 further including measuring the impedance seen by looking into input terminals of the matching network, determining the values of the impedances associated with the values of the third and fourth reactances, and calculating the plasma impedance from (a) the measured impedance seen by looking into input terminals of the matching network, (b) the determined values of the impedances associated with the values of the third and fourth reactances at the time of measuring the impedance seen by looking into input terminals of the matching network and (c) fixed values of impedances between the matching network input terminals and the electrode.

5. The method of claim 1 wherein the function of plasma impedance which results in varying the output power of the second source is power reflected back to output terminals of the second source, determining output power of the second source, and controlling the output power of the second source in response to a comparison of the power reflected back to output terminals of the second source, an indication of output power of the second source and a set point for power to be applied to the plasma.

6. The method of claim 1 wherein the function of plasma impedance which results in varying the output power of the second source is a measured value of an impedance component of the plasma as coupled to the electrode.

7. The method of claim 6 wherein the measured value of impedance component of the plasma as coupled to the electrode is derived from at least one electric parameter looking into input terminals of the matching network.

8. The method of claim 6 wherein the measured value of impedance component of the plasma as coupled to the electrode is derived by measuring thickness of a sheath between the holder and the plasma and correlating sheath thickness with the load of the plasma as coupled to the second matching network.

9. The method of claim 8 wherein the sheath thickness is measured optically.

10. The method of claim 1 wherein the excitation reactance includes a coil.

11. Apparatus for processing a workpiece comprising

a vacuum plasma processor chamber having (a) a workpiece holder including an electrode for electrostatically supplying electric energy to the workpiece, (b) a first port for supplying an ionizable gas to the chamber, (c) a second port for connecting a vacuum pump arrangement to the chamber;

an excitation reactance for supplying sufficient electric and magnetic energy to the ionizable gas to excite the gas to a plasma;

a first a.c. source;

a first matching network connected between the first a.c. source and the excitation reactance, the first matching network including first and second variable reactances;

a sensing arrangement responsive to the plasma impedance;

a second a.c. source;

a second matching network connected between the second a.c. source and the electrode, the second matching network including third and fourth variable reactances;

a controller for (a) the vacuum pump arrangement to control the vacuum in the chamber, (b) flow rate of gas supplied to the first port, (c) output power of the first a.c. source, (d) output power of the second a.c. source, and (e) the values of the first, second, third and fourth variable impedances, the controller including an input device and a memory storing several recipes for different conditions in the chamber, each recipe including a set of parameters for preset values of the vacuum, flow rate, first source output power and second source output power, the controller responding to the input device for accessing the memory for causing the vacuum in the chamber, gas flow rate and output power of the first and second sources to be at the preset values within predetermined ranges associated with a selected one of the recipes, the controller responding to the sensing arrangement for (a) controlling the first and second reactances to obtain a substantial impedance match between the first source and the impedance seen looking from the first matching network into the excitation reactance while the plasma is loading the excitation reactance and (b) controlling the third and fourth reactances to obtain a substantial impedance match between the second source and the impedance seen looking from the second matching network into the electrode while the plasma is loading the excitation reactance electrode;

the power reflected back to the second source having a tendency to have a step change as a result of a small variation in the value of at least one of the third and fourth reactances from the values which provide a match between the output impedance of the second source and the load the second source drives, the at least one small change resulting from an incremental change in at least one of the parameters while the one parameter remains in its range for the single set of parameters for the selected recipe;

the controller being arranged for responding to the sensing arrangement for overcoming the tendency for the step change by varying the output power of the second source in response to a function of plasma impedance, the second source output power being variable at a speed much faster than the speed that the third and fourth reactances change to produce the tendency to have the step change.

12. The apparatus of claim 11 wherein the function of plasma impedance which results in the output power of the second source varying results from measurements of electric parameters seen by looking from second source toward the matching network.

13. The apparatus of claim 11 wherein the function of plasma impedance which results in the output power of the second source varying is a calculated value of plasma impedance coupled to the electrode.

14. The apparatus of claim 11 wherein the function of plasma impedance which results in varying the output power of the second source is power reflected back to output terminals of the second source, the sensing arrangement being arranged for deriving a signal indicative of output power of the second source, the controller being arranged for controlling the output power of the second source in response to a comparison of the power reflected back to output terminals of the second source and the signal indicative of output power of the second source.

15. The apparatus of claim 11 wherein the function of plasma impedance which results in varying the output power of the second source is a measured value of impedance of the plasma as coupled to the electrode.

16. The apparatus of claim 15 wherein the measured value of impedance component of the plasma as coupled to the electrode is derived from at least one electric parameter looking into input terminals of the matching network.

17. The apparatus of claim 15 wherein the measured value of impedance component of the plasma as coupled to the electrode is derived by a gauge for measuring thickness of a sheath between the holder and the plasma.

18. The apparatus of claim 17 wherein the gauge is arranged for measuring sheath thickness optically.

19. The apparatus of claim 11 wherein the excitation reactance includes a coil.