In-line non-contact depletion capacitance measurement method and apparatus

• US 6,265,890 B1
• Filed: 08/26/1999
• Issued: 07/24/2001
• Est. Priority Date: 08/26/1999
• Status: Expired due to Fees

• Current Assignee: Lucent Technologies, Inc. (Nokia Corporation)
• Original Assignee: Lucent Technologies, Inc. (Nokia Corporation)
• Inventors: Chittipeddi, Sailesh, Roy, Pradip K., Chacon, Carlos M.
• Primary Examiner(s): Metjahic, Safet
• Assistant Examiner(s): LEROUX, ETIENNE PIERRE
• Application Number:
  US09/383,457
• Time in Patent Office: 698 Days
• Field of Search: 324/750, 324/765, 324/659, 324/752, 324/679, 324/676, 438/17, 438/104, 438/934, 438/974, 257/288, 257/327, 257/403, 257/324, 257/298, 365/149, 365/184, 422/82.09, 422/136, 422/290
• US Class Current: 324/754.05
• CPC Class Codes: G01R 27/2611 Measuring inductance

Abstract

A method and apparatus for in-line, non-contact depletion capacitance measurement of a semiconductor wafer using non-contact voltage measurement and non-contact surface photovoltage response.

Claims

1. A method for in-line, non-contact depletion capacitance measurement of a test semiconductor wafer, the method comprising:

oxidizing a control wafer, and oxidizing a test wafer having a junction depletion region;

measuring a control wafer surface voltage potential and a test wafer surface voltage potential with a non-contact electrostatic measurement means;

directing a pulsed light source against the control wafer and the test wafer;

measuring a control wafer surface photovoltage and a test wafer surface photovoltage with a non-contact SPV measurement means; and

determining a depletion capacitance of the test wafer on the basis of the difference between the control wafer surface photovoltage and the control wafer surface voltage and the test wafer photovoltage and the test wafer surface voltage, and known dopant concentrations at the n-type and p-type regions of the test wafer.

2. The method of claim 1 wherein the electrostatic measurement means is an electrostatic voltmeter.

3. The method of claim 2 wherein the electrostatic voltmeter is a Kelvin probe.

4. The method of claim 1 wherein said pulsed light source is a laser which generates laser pulsed radiation.

5. An apparatus for in-line, non-contact depletion capacitance measurement of a test semiconductor wafer, the apparatus comprising:

a means for oxidizing a control wafer, and oxidizing a test wafer having a junction depletion region;

a non-contact electrostatic measurement means for measuring a control wafer surface voltage potential and a test wafer surface voltage potential;

a light source for directing a pulsed light against the control wafer and the test wafer;

a SPV measurement means for measuring a control wafer surface photovoltage and a test wafer surface photovoltage; and

a means for determining the depletion capacitance of the test wafer on the basis of the charge deposition and a difference between the control wafer surface photovoltage and the control wafer surface voltage potential and the test wafer surface photovoltage and the test wafer surface voltage potential, and known dopant concentrations at the n-type and p-type regions of the test wafer.

6. The apparatus of claim 5 wherein the electrostatic measurement means is an electrostatic voltmeter.

7. The apparatus of claim 6 wherein the electrostatic voltmeter is a Kelvin probe.

8. The apparatus of claim 5 wherein said pulsed light source is a laser which generates laser pulsed radiation.